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NTMSD6N303R2

P1-P3P4-P6P7-P9P10-P11
© Semiconductor Components Industries, LLC, 2012
December, 2012 − Rev. 3
1 Publication Order Number:
NTMSD6N303R2/D
NTMSD6N303,
NVMSD6N303
Power MOSFET
6 Amps, 30 Volts
N−Channel SO−8 FETKYt
The FETKY product family incorporates low R
DS(on)
MOSFETs
packaged with an industry leading, low forward drop, low leakage
Schottky Barrier rectifier to offer high efficiency components in a
space saving configuration. Independent pinouts for MOSFET and
Schottky die allow the flexibility to use a single component for
switching and rectification functions in a wide variety of applications.
Features
• These Devices are Pb−Free and are RoHS Compliant
• NVMSD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Applications
• Buck Converter
• Buck−Boost
• Synchronous Rectification
• Low Voltage Motor Control
• Battery Packs
• Chargers
• Cell Phones
MOSFET MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted) (Note 1)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 Vdc
Drain−to−Gate Voltage (R
GS
= 1.0 MW)
V
DGR
30 Vdc
Gate−to−Source Voltage − Continuous V
GS
"20 Vdc
Drain Current − (Note 2)
− Continuous @ T
A
= 25°C
− Single Pulse (tp ≤ 10 ms)
I
D
I
DM
6.0
30
Adc
Apk
Total Power Dissipation @ T
A
= 25°C
(Note 2)
P
D
2.0 Watts
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 30 Vdc, V
GS
= 5.0 Vdc,
V
DS
= 20 Vdc, I
L
= 9.0 Apk,
L = 10 mH, R
G
= 25 W)
E
AS
325 mJ
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
2. Mounted on 2″ square FR4 board
(1 in sq, 2 oz. Cu 0.06″ thick single sided), 10 sec. max.
Device Package Shipping
†
ORDERING INFORMATION
NTMSD6N303R2G SO−8
(Pb−Free)
2500/Tape & Reel
1
2
3
4
8
7
6
5
A
A
S
G
C
C
D
D
(TOP VIEW)
MOSFET
6.0 AMPERES
30 VOLTS
24 mW @ V
GS
= 10 V (Typ)
SCHOTTKY DIODE
6.0 AMPERES
30 VOLTS
420 mV @ I
F
= 3.0 A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SO−8
CASE 751
STYLE 18
MARKING DIAGRAM &
PIN ASSIGNMENT
E6N3 = Device Code
x = Blank or S
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
1
8
AA SG
CC DD
(Note: Microdot may be in either location)
1
8
E6N3x
AYWW G
G
NTMSD6N303R2SG SO−8
(Pb−Free)
2500/Tape & Reel
NVMSD6N303R2G SO−8
(Pb−Free)
2500/Tape & Reel
http://onsemi.com
NTMSD6N303, NVMSD6N303
http://onsemi.com
2
SCHOTTKY RECTIFIER MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Reverse Voltage
DC Blocking Voltage
V
RRM
V
R
30 Volts
Average Forward Current (Note 3)
(Rated V
R
) T
A
= 104°C
I
O
2.0 Amps
Peak Repetitive Forward Current (Note 3)
(Rated V
R
, Square Wave, 20 kHz) T
A
= 108°C
I
frm
4.0 Amps
Non−Repetitive Peak Surge Current
(Surge applied at rated load conditions, half−wave, single phase, 60 Hz)
I
fsm
30 Amps
THERMAL CHARACTERISTICS − SCHOTTKY AND MOSFET
Thermal Resistance − Junction−to−Ambient (Note 4) − MOSFET
R
q
JA
167
°C/W
Thermal Resistance − Junction−to−Ambient (Note 5) − MOSFET
R
q
JA
97
Thermal Resistance − Junction−to−Ambient (Note 3) − MOSFET
R
q
JA
62.5
Thermal Resistance − Junction−to−Ambient (Note 4) − Schottky
R
q
JA
197
Thermal Resistance − Junction−to−Ambient (Note 5) − Schottky
R
q
JA
97
Thermal Resistance − Junction−to−Ambient (Note 3) − Schottky
R
q
JA
62.5
Operating and Storage Temperature Range T
J
, T
stg
−55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
3. Mounted on 2″ square FR4 board (1 in sq, 2 oz. Cu 0.06″ thick single sided), 10 sec. max.
4. Mounted with minimum recommended pad size, PC Board FR4.
5. Mounted on 2″ square FR4 board (1 in sq, 2 oz. Cu 0.06″ thick single sided), Steady State.
SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristics
Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 6)
V
F
T
J
= 25°C T
J
= 125°C
Volts
I
F
= 100 mAdc
I
F
= 3.0 Adc
I
F
= 6.0 Adc
0.28
0.42
0.50
0.13
0.33
0.45
Maximum Instantaneous Reverse Current (Note 6)
V
R
= 30 V
I
R
T
J
= 25°C T
J
= 125°C
250
−
−
25
mA
mA
Maximum Voltage Rate of Change V
R
= 30 V dV/dt 10,000
V/ms
6. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
NTMSD6N303, NVMSD6N303
http://onsemi.com
3
MOSFET ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 mA)
Temperature Coefficient (Positive)
V
(BR)DSS
30
−
−
30
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 24 Vdc, V
GS
= 0 Vdc, T
J
= 25°C)
(V
DS
= 24 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
I
DSS
−
−
−
−
1.0
20
mAdc
Gate−Body Leakage Current
(V
GS
= ±20 Vdc, V
DS
= 0 Vdc)
I
GSS
− − 100
nAdc
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 mAdc)
Temperature Coefficient (Negative)
V
GS(th)
1.0
−
1.8
4.6
2.5
−
Vdc
mV/°C
Static Drain−to−Source On−State Resistance
(V
GS
= 10 Vdc, I
D
= 6 Adc)
(V
GS
= 4.5 Vdc, I
D
= 3.9 Adc)
R
DS(on)
−
−
0.024
0.030
0.032
0.040
W
Forward Transconductance
(V
DS
= 15 Vdc, I
D
= 5.0 Adc)
g
FS
− 10 −
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 24 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 680 950 pF
Output Capacitance C
oss
− 210 300
Reverse Transfer Capacitance C
rss
− 70 135
SWITCHING CHARACTERISTICS (Notes 7 & 8)
Turn−On Delay Time
(V
DD
= 15 Vdc, I
D
= 1 A,
V
GS
= 10 V,
R
G
= 6 W)
t
d(on)
− 9 18
ns
Rise Time t
r
− 22 40
Turn−Off Delay Time t
d(off)
− 45 80
Fall Time t
f
− 45 80
Turn−On Delay Time
(V
DD
= 15 Vdc, I
D
= 1 A,
V
GS
= 4.5 V,
R
G
= 6 W)
t
d(on)
− 13 30
ns
Rise Time t
r
− 27 50
Turn−Off Delay Time t
d(off)
− 22 40
Fall Time t
f
− 34 70
Gate Charge
(V
DS
= 15 Vdc,
V
GS
= 10 Vdc,
I
D
= 5 A)
Q
T
− 19 30
nC
Q
1
− 2.4 −
Q
2
− 5.0 −
Q
3
− 4.3 −
BODY−DRAIN DIODE RATINGS (Note 7)
Diode Forward On−Voltage (I
S
= 1.7 Adc, V
GS
= 0 V)
(I
S
= 1.7 Adc, V
GS
= 0 V, T
J
= 150°C)
V
SD
−
−
0.75
0.62
1.0
−
Vdc
Reverse Recovery Time
(I
S
= 5 A, V
GS
= 0 V,
dI
S
/dt = 100 A/ms)
t
rr
− 26 −
ns
t
a
− 11 −
t
b
− 15 −
Reverse Recovery Stored Charge
(I
S
= 5 A, dI
S
/dt = 100 A/ms, V
GS
= 0 V)
Q
RR
− 0.015 −
mC
7. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
8. Switching characteristics are independent of operating junction temperature.
P1-P3P4-P6P7-P9P10-P11

NTMSD6N303R2

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Manufacturer:
ON Semiconductor
Description:
MOSFET 30V 6A N-Channel
Lifecycle:
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