SIHP6N40D-GE3 Datasheet SIHP6N40D-GE3, SIHP6N40D-E3 | P1-P3

SiHP6N40D

www.vishay.com

Vishay Siliconix

S12-0687-Rev. A, 02-Apr-12

1

Document Number: 91498

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

D Series Power MOSFET

FEATURES

•Optimal Design

- Low Area Specific On-Resistance

- Low Input Capacitance (C

iss

)

- Reduced Capacitive Switching Losses

- High Body Diode Ruggedness

- Avalanche Energy Rated (UIS)

• Optimal Efficiency and Operation

- Low Cost

- Simple Gate Drive Circuitry

- Low Figure-of-Merit (FOM): R

on

x Q

g

- Fast Switching

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

Note

* Lead (Pb)-containing terminations are not RoHS-compliant.

Exemptions may apply.

APPLICATIONS

• Consumer Electronics

- Displays (LCD or Plasma TV)

• Server and Telecom Power Supplies

- SMPS

• Industrial

- Welding

- Induction Heating

- Motor Drives

• Battery Chargers

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V

DD

= 50 V, starting T

J

= 25 °C, L = 2.3 mH, R

g

= 25 , I

AS

= 9.5 A.

c. 1.6 mm from case.

d. I

SD

 I

D

, starting T

J

= 25 °C.

PRODUCT SUMMARY

V

DS

(V) at T

J

max. 450

R

DS(on)

max. at 25 °C ()V

GS

= 10 V 1.0

Q

g

max. (nC) 18

Q

gs

(nC) 3

Q

gd

(nC) 4

Configuration Single

N-Channel MOSFET

G

D

S

TO-220AB

G

D

S

ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free SiHP6N40D-E3

Lead (Pb)-free and Halogen-free SiHP6N40D-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage

V

DS

400

V

Gate-Source Voltage

V

GS

± 30

Gate-Source Voltage AC (f > 1 Hz) 30

Continuous Drain Current (T

J

= 150 °C) V

GS

at 10 V

T

C

= 25 °C

I

D

6

AT

C

= 100 °C 4

Pulsed Drain Current

a

I

DM

13

Linear Derating Factor 0.8 W/°C

Single Pulse Avalanche Energy

b

E

AS

104 mJ

Maximum Power Dissipation P

D

104 W

Operating Junction and Storage Temperature Range T

J

, T

stg

- 55 to + 150 °C

Drain-Source Voltage Slope T

J

= 125 °C

dV/dt

24

V/ns

Reverse Diode dV/dt

d

0.48

Soldering Recommendations (Peak Temperature) for 10 s 300

c

°C

SiHP6N40D

www.vishay.com

Vishay Siliconix

S12-0687-Rev. A, 02-Apr-12

2

Document Number: 91498

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. C

oss(er)

is a fixed capacitance that gives the same energy as C

oss

while V

DS

is rising from 0 % to 80 % V

DS

.

b. C

oss(tr)

is a fixed capacitance that gives the same charging time as C

oss

while V

DS

is rising from 0 % to 80 % V

DS

.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

thJA

-62

°C/W

Maximum Junction-to-Case (Drain)

R

thJC

-1.2

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 400 - - V

V

DS

Temperature Coefficient

V

DS

/T

J

Reference to 25 °C, I

D

= 250 μA

-0.53-

V/°C

Gate-Source Threshold Voltage (N) V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 3 - 5 V

Gate-Source Leakage I

GSS

V

GS

= ± 30 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 400 V, V

GS

= 0 V - - 1

μA

V

DS

= 320 V, V

GS

= 0 V, T

J

= 125 °C - - 10

Drain-Source On-State Resistance R

DS(on)

V

GS

= 10 V I

D

= 3 A - 0.85 1.0 

Forward Transconductance g

fs

V

DS

= 50 V, I

D

= 3 A - 1.7 - S

Dynamic

Input Capacitance C

iss

V

GS

= 0 V,

V

DS

= 100 V,

f = 1 MHz

- 311 -

pF

Output Capacitance C

oss

-38-

Reverse Transfer Capacitance C

rss

-7-

Effective output capacitance, energy

C

o(er)

V

GS

= 0 V,

V

DS

= 0 V to 320 V

-44-

Effective output capacitance, time

C

o(tr)

-54-

Total Gate Charge Q

g

V

GS

= 10 V I

D

= 3 A, V

DS

= 320 V

-918

nC Gate-Source Charge Q

gs

-3-

Gate-Drain Charge Q

gd

-4-

Turn-On Delay Time t

d(on)

V

DD

= 400 V, I

D

= 3 A,

V

GS

= 10 V, R

g

= 9.1 

-1224

ns

Rise Time t

r

-1122

Turn-Off Delay Time t

d(off)

-1428

Fall Time t

f

-816

Gate Input Resistance R

g

f = 1 MHz, open drain - 1.9 - 

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

MOSFET symbol

showing the

integral reverse

p - n junction diode

--6

A

Pulsed Diode Forward Current I

SM

--24

Diode Forward Voltage V

SD

T

J

= 25 °C, I

S

= 3 A, V

GS

= 0 V - - 1.2 V

Reverse Recovery Time t

rr

T

J

= 25 °C, I

F

= I

S

= 3 A,

dI/dt = 100 A/μs, V

R

= 20 V

- 236 - ns

Reverse Recovery Charge Q

rr

-1.1-μC

Reverse Recovery Current I

RRM

-9-A

S

D

G

SiHP6N40D

www.vishay.com

Vishay Siliconix

S12-0687-Rev. A, 02-Apr-12

3

Document Number: 91498

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0 5 10 15 20 25 30

11 V

0

3

6

9

12

15

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9 V

8 V

7 V

6 V

BOTTOM 5 V

T

J

= 25 °C

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0 5 10 15 20 25 30

5 V

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9 V

8 V

7 V

BOTTOM 6 V

T

J

= 150 °C

0

2

4

6

8

10

V

GS

, Gate-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0 5 10 15 20

25

T

J

= 25 °C

T

J

= 150 °C

4

8

12

16

0

T

J

, Junction Temperature (°C)

R

DS(on)

, Drain-to-Source

- 60 - 40 - 20

0

20 40 60 80 100 120

140

160

On Resistance (Normalized)

0

0.5

1

1.5

2

2.5

3

V

GS

= 10 V

I

D

= 3 A

ġ

50 100 150 200 250 300 350 400

V

DS

, Drain-to-Source Voltage (V)

Capacitance (pF)

100

10

1

1000

0

C

iss

C

oss

C

rss

V

GS

= 0 V, f = 1 MHz

C

iss

= C

gs

+ C

gd

, C

ds

Shorted

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

Q

g

, Total Gate Charge (nC)

V

GS

, Gate-to-Source Voltage (V)

16

4

0

24

20

12

8

0 4 8 12 16

V

DS

= 320 V

V

DS

= 200 V

V

DS

= 80 V

SIHP6N40D-GE3

SIHP6N40D-GE3

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