TC74AC04FTEL Datasheet TC74AC04FTEL | P1-P3

TC74AC04P/F/FT

2014-03-01

1

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC74AC04P, TC74AC04F, TC74AC04FT

Hex Inverter

The TC74AC04 is an advanced high speed CMOS INVERTER

fabricated with silicon gate and double-layer metal wiring

C

2

MOS technology.

It achieves the high speed operation similar to equivalent

Bipolar Schottky TTL while maintaining the CMOS low power

dissipation.

The internal circuit is composed of 3 stages including buffer

output, which provide high noise immunity and stable output.

All inputs are equipped with protection circuits against satic

discharge or transient excess voltage.

Features

• High speed: t

pd

= 3.2 ns (typ.) at V

CC

= 5 V

• Low power dissipation: I

CC

= 4 μA (max) at Ta = 25°C

• High noise immunity: V

NIH

= V

NIL

= 28% V

CC

(min)

• Symmetrical output impedance: |I

OH

| = I

OL

= 24 mA (min)

Capability of driving 50 Ω

transmission lines.

• Balanced propagation delays: t

pLH

∼

−

t

pHL

• Wide operating voltage range: V

CC (opr)

= 2 to 5.5 V

• Pin and function compatible with 74F04

TC74AC04P

TC74AC04F

TC74AC04FT

Weight

DIP14-P-300-2.54 : 0.96 g (typ.)

SOP14-P-300-1.27A : 0.18 g (typ.)

TSSOP14-P-0044-0.65A : 0.06 g (typ.)

Start of commercial production

1986-05

TC74AC04P/F/FT

2014-03-01

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Pin Assignment IEC Logic Symbol

Truth Table

A Y

L H

H L

Absolute Maximum Ratings (Note 1)

Characteristics Symbol Rating Unit

Supply voltage range V

CC

−0.5 to 7.0 V

DC input voltage V

IN

−0.5 to V

CC

+ 0.5 V

DC output voltage V

OUT

−0.5 to V

CC

+ 0.5 V

Input diode current I

IK

±20 mA

Output diode current I

OK

±50 mA

DC output current I

OUT

±50 mA

DC V

CC

/ground current I

CC

±150 mA

Power dissipation P

D

500 (DIP) (Note 2)/180 (SOP/TSSOP) mW

Storage temperature T

stg

−65 to 150 °C

Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or

even destruction.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C should be

applied up to 300 mW.

V

CC

9

6A

6Y

5A

8

14

13

12

11

10

1A

1

2

3

4

5

6

7

2Y

3A

3Y

GND

5Y

4A

4Y

(top view)

1Y

2A

(5)

(11)

(9)

3A

1

5A

4A

(13)

6A

(1)

(3)

1A

2A

(6)

(10)

(8)

(12)

(2)

(4)

3Y

5Y

4Y

6Y

1Y

2Y

TC74AC04P/F/FT

2014-03-01

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Operating Ranges (Note)

Characteristics Symbol Rating Unit

Supply voltage V

CC

2.0 to 5.5 V

Input voltage V

IN

0 to V

CC

V

Output voltage V

OUT

0 to V

CC

V

Operating temperature T

opr

−40 to 85 °C

Input rise and fall time dt/dV

0 to 100 (V

CC

= 3.3 ± 0.3 V)

0 to 20 (V

CC

= 5 ± 0.5 V)

ns/V

Note: The operating ranges must be maintained to ensure the normal operation of the device.

Unused inputs must be tied to either V

CC

or GND.

Electrical Characteristics

DC Characteristics

Test Condition Ta = 25°C

Ta =

−40 to 85°C

Characteristics Symbol

V

CC

(V)

Min Typ. Max Min Max

Unit

High-level input

voltage

V

IH

―

2.0

3.0

5.5

1.50

2.10

3.85

―

1.50

2.10

3.85

―

V

Low-level input

voltage

V

IL

―

2.0

3.0

5.5

―

0.50

0.90

1.65

―

0.50

0.90

1.65

V

I

OH

= −50 μA

2.0

3.0

4.5

1.9

2.9

4.4

2.0

3.0

4.5

―

1.9

2.9

4.4

―

High-level output

voltage

V

OH

V

IN

= V

IL

I

OH

= −4 mA

I

OH

= −24 mA

I

OH

= −75 mA (Note)

3.0

4.5

5.5

2.58

3.94

―

2.48

3.80

3.85

―

V

I

OL

= 50 μA

2.0

3.0

4.5

―

0.0

0.1

―

0.1

Low-level output

voltage

V

OL

V

IN

= V

IH

I

OL

= 12 mA

I

OL

= 24 mA

I

OL

= 75 mA (Note)

3.0

4.5

5.5

―

0.36

―

0.44

1.65

V

Input leakage

current

I

IN

V

IN

= V

CC

or GND 5.5 ― ― ±0.1 ― ±1.0 μA

Quiescent supply

current

I

CC

V

IN

= V

CC

or GND 5.5 ― ― 4.0 ― 40.0 μA

Note: This spec indicates the capability of driving 50 Ω transmission lines.

One output should be tested at a time for a 10 ms maximum duration.

TC74AC04FTEL

TC74AC04FTEL

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