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2ST5949

P1-P3P4-P6P7-P8
November 2008 Rev 4 1/8
8
2ST5949
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage V
CEO
= 250 V
■ Complementary to 2ST2121
■ Typical f
t
= 25 MHz
■ Fully characterized at 125
o
C
Application
■ Audio power amplifier
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Figure 1. Internal schematic diagram
Table 1. Device summary
TO-3
1
2
Order code Marking Package Packaging
2ST5949 2ST5949 TO-3 tray
www.st.com
Obsolete Product(s) - Obsolete Product(s)
Absolute maximum ratings 2ST5949
2/8
1 Absolute maximum ratings
Table 2. Absolute maximum rating
Table 3. Thermal data
Symbol Parameter Value Unit
V
CBO
Collector-base voltage (I
E
= 0) 250 V
V
CEO
Collector-emitter voltage (I
B
= 0) 250 V
V
EBO
Emitter-base voltage (I
C
= 0) 6 V
I
C
Collector current 17 A
I
CM
Collector peak current (t
P
< 5 ms) 34 A
P
TOT
Total dissipation at T
c
= 25°C 250 W
T
stg
Storage temperature -65 to 150 °C
T
J
Max. operating junction temperature 150 °C
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case _____ __max 0.7 °C/W
Obsolete Product(s) - Obsolete Product(s)
2ST5949 Electrical characteristics
3/8
2 Electrical characteristics
(T
case
= 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
Collector cut-off current
(I
E
= 0)
V
CB
= 250 V 5 µA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 6 V 5 µA
V
(BR)CEO
(1)
Collector-emitter
breakdown voltage (I
B
= 0)
I
C
= 50 mA 250 V
V
(BR)CBO
Collector-base breakdown
voltage (I
E
= 0)
I
C
= 100 µA 250 V
V
(BR)EBO
(1)
Emitter-base breakdown
voltage (I
C
= 0)
I
E
= 1 mA 6 V
V
CE(sat)
(1)
Collector-emitter
saturation voltage
I
C
= 8 A I
B
= 800 mA 3 V
V
BE
(1)
Base-emitter voltage I
C
= 7 A V
CE
= 5 V 1.5 V
h
FE
DC current gain
I
C
= 1 A V
CE
= 5 V
I
C
= 7 A V
CE
= 5 V
80
35
160
f
T
Transition frequency I
C
= 1 A V
CE
= 5 V 25 MHz
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P8

2ST5949

Mfr. #:
Buy 2ST5949
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT High PWR NPN planar bipolar trans
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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