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BZV85-C12,113

P1-P3P4-P6P7-P9P10-P11
BZV85_SER_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 10 November 2009 3 of 10
NXP Semiconductors
BZV85 series
Voltage regulator diodes
5. Limiting values
[1] T
j
=25°C prior to surge
[2] Device mounted on a PCB with 1 cm
2
copper area per lead.
[3] If the leads are kept at T
tp
=55°C at 4 mm from body.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
I
F
forward current - 500 mA
I
ZSM
non-repetitive peak reverse
current
square wave;
t
p
= 100 µs
[1]
- see
Table 8
half sine wave;
t
p
=10ms
[1]
- see
Table 8
P
tot
total power dissipation
T
amb
=25°C;
lead length 10 m
m
[2]
-1 W
[3]
- 1.3 W
P
ZSM
non-repetitive peak reverse
power dissipation
square wave;
t
p
= 100 µs
[1]
-60W
T
j
junction temperature - 200 °C
T
stg
storage temperature −65 +200 °C
BZV85_SER_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 10 November 2009 4 of 10
NXP Semiconductors
BZV85 series
Voltage regulator diodes
6. Thermal characteristics
[1] Device mounted on a PCB with 1 cm
2
copper area per lead.
7. Characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-t)
thermal resistance from
junction to tie-point
lead length 4 mm - - 110 K/W
R
th(j-a)
thermal resistance from
junction to ambient
lead length 10 mm
[1]
- - 175 K/W
Fig 1. Thermal resistance from junction to tie-point as a function of pulse duration;
lead length 4 mm
006aab844
10
−2
10
−1
11010
2
10
3
10
4
1
10
10
2
10
3
t
p
(ms)
R
th(j-t)
(K/W)
0.02
0.01
0
0.75
0.50
0.33
0.20
0.10
0.05
δ = 1
Table 7. Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
=50mA --1V
BZV85_SER_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 10 November 2009 5 of 10
NXP Semiconductors
BZV85 series
Voltage regulator diodes
Table 8. Characteristics per type
T
j
=25
°
C unless otherwise specified.
BZV85-
Cxxx
Working
voltage
V
Z
(V)
Differential
resistance
r
dif
(Ω)
Temperature
coefficient
S
Z
(mV/K)
Test
current
I
test
(mA)
Diode
capacitance
C
d
(pF)
Reverse
current
I
R
(µA)
Non-repetitive peak
reverse current
I
ZSM
at I
test
at I
test
at I
test
atf = 1 MHz;
V
R
=0V
att
p
= 100 µs;
T
amb
=25°C
att
p
= 10 ms;
T
amb
=25°C
Min Max Max Min Max Max Max V
R
(V) Max (A) Max (mA)
3V6 3.4 3.8 15 −3.5 −1.0 60 450 50 1.0 8.0 2000
3V9 3.7 4.1 15 −3.5 −1.0 60 450 10 1.0 8.0 1950
4V3 4.0 4.6 13 −2.7 0 50 450 5 1.0 8.0 1850
4V7 4.4 5.0 13 −2.0 0.7 45 300 3 1.0 8.0 1800
5V1 4.8 5.4 10 −0.5 2.2 45 300 3 2.0 8.0 1750
5V6 5.2 6.0 7 0 2.7 45 300 2 2.0 8.0 1700
6V2 5.8 6.6 4 0.6 3.6 35 200 2 3.0 7.0 1620
6V8 6.4 7.2 3.5 1.3 4.3 35 200 2 4.0 7.0 1550
7V5 7.0 7.9 3 2.5 5.5 35 150 1 4.5 5.0 1500
8V2 7.7 8.7 5 3.1 6.1 25 150 0.7 5.0 5.0 1400
9V1 8.5 9.6 5 3.8 7.2 25 150 0.7 6.5 4.0 1340
10 9.4 10.6 8 4.7 8.5 25 90 0.2 7.0 4.0 1200
11 10.4 11.6 10 5.3 9.3 20 85 0.2 7.7 3.0 1100
12 11.4 12.7 10 6.3 10.8 20 85 0.2 8.4 3.0 1000
13 12.4 14.1 10 7.4 12.0 20 80 0.2 9.1 3.0 900
15 13.8 15.6 15 8.9 13.6 15 75 0.05 10.5 2.5 760
16 15.3 17.1 15 10.7 15.4 15 75 0.05 11.0 1.75 700
18 16.8 19.1 20 11.8 17.1 15 70 0.05 12.5 1.75 600
20 18.8 21.2 24 13.6 19.1 10 60 0.05 14.0 1.75 540
22 20.8 23.3 25 16.6 22.1 10 60 0.05 15.5 1.5 500
24 22.8 25.6 30 18.3 24.3 10 55 0.05 17 1.5 450
27 25.1 28.9 40 20.1 27.5 8 50 0.05 19 1.2 400
30 28.0 32.0 45 22.4 32.0 8 50 0.05 21 1.2 380
33 31.0 35.0 45 24.8 35.0 8 45 0.05 23 1.0 350
36 34.0 38.0 50 27.2 39.9 8 45 0.05 25 0.9 320
39 37.0 41.0 60 29.6 43.0 6 45 0.05 27 0.8 296
43 40.0 46.0 75 34.0 48.3 6 40 0.05 30 0.7 270
47 44.0 50.0 100 37.4 52.5 4 40 0.05 33 0.6 246
51 48.0 54.0 125 40.8 56.5 4 40 0.05 36 0.5 226
56 52.0 60.0 150 46.8 63.0 4 40 0.05 39 0.4 208
62 58.0 66.0 175 52.2 72.5 4 35 0.05 43 0.4 186
68 64.0 72.0 200 60.5 81.0 4 35 0.05 48 0.35 171
75 70.0 80.0 225 66.5 88.0 4 35 0.05 53 0.3 161
P1-P3P4-P6P7-P9P10-P11

BZV85-C12,113

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Manufacturer:
Nexperia
Description:
Zener Diodes DIODE ZENER 5 PCT
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