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STN790A

P1-P3P4-P6P7-P9
June 2008 Rev 4 1/9
9
STN790A
Medium current, high performance, low voltage PNP transistor
Features
■ Very low collector to emitter saturation voltage
■ DC current gain, h
FE
>100
■ 3 A continuous collector current
■ 40 V breakdown voltage V
(BR)CER
■
SOT-223 plastic package for surface mounting
circuits in tape and reel packing
Applications
■ Power management in portable equipment
■ Voltage regulation in bias supply circuits
■ Switching regulator in battery charger
applications
■ Heavy load driver
Description
The device in manufactured in low voltage PNP
planar technology by using a “Base Island” layout.
The resulting transistor shows exceptional high
gain performance coupled with very low
saturation voltage.
Figure 1. Internal schematic diagram
SOT-223
1
2
4
3
Table 1. Device summary
Order code Marking Package Packaging
STN790A N790A SOT-223 Tape and reel
ww w.st.com
Electrical ratings STN790A
2/9
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
V
CBO
Collector-base voltage (I
E
= 0) -40 V
V
CER
Collector-emitter voltage (R
BE
= 47 Ω)
-40 V
V
CEO
Collector-emitter voltage (I
B
= 0) -30 V
V
EBO
Emitter-base voltage (I
C
= 0) -5 V
I
C
Collector current -3 A
I
CM
Collector peak current (t
P
< 5 ms) -6 A
P
tot
Total dissipation at T
amb
= 25 °C 1.6 W
T
stg
Storage temperature -65 to 150 °C
T
J
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-amb
Thermal resistance junction-ambient
(1)
__max
1. Device mounted on PCB area of 1 cm
2
.
78 °C/W
STN790A Electrical characteristics
3/9
2 Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
Collector cut-off current
(I
E
= 0)
V
CB
= -30 V
V
CB
= -30 V; T
C
= 100 °C
-10
-100
µA
µA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= -4 V
-10 µA
V
(BR)CEO
(1)
Collector-emitter
breakdown voltage
(I
B
= 0)
I
C
= -10 mA
-30 V
V
(BR)CER
(1)
Collector-emitter
breakdown voltage
(R
BE
= 47 Ω)
I
C
= -10 mA
-40 V
V
(BR)CBO
Collector-base
breakdown voltage
(I
E
= 0)
I
C
= -100 µA
-40 V
V
(BR)EBO
Emitter-base breakdown
voltage (I
C
= 0)
I
E
= -100 µA
-5 V
V
CE(sat)
(1)
Collector-emitter
saturation voltage
I
C
= -0.5 A I
B
= -5 mA
I
C
= -1.2 A I
B
= -20 mA
I
C
= -2 A I
B
= -20 mA
I
C
= -3 A I
B
= -100 mA
I
C
= -3 A I
B
= -100 mA
T
J
= 100 °C
-0.15
-0.25
-0.5
-0.7
-0.9
V
V
V
V
V
V
BE(sat)
(1)
Base-emitter saturation
voltage
I
C
= -1 A I
B
= -10 mA
-0.8 -1 V
V
BE(on)
(1)
Base-emitter on voltage
I
C
= -1 A V
CE
= -2 V
-0.8 -1 V
h
FE
(1)
DC current gain
I
C
= -10 mA V
CE
= -2 V
I
C
= -500 mA V
CE
= -2 V
I
C
= -1 A V
CE
= -2 V
I
C
= -2 A V
CE
= -1 V
I
C
= -3 A V
CE
= -1 V
100
100
100
100
90
200
200
160
130
400
400
P1-P3P4-P6P7-P9

STN790A

Mfr. #:
Buy STN790A
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT POWER MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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