ESM6045AV Datasheet ESM6045AV | P1-P3

ESM6045AV

NPN DARLINGTON POWER MODULE

■ HIGH CURRENT POWER BIPOLAR MODULE

■ VERY LOW R

th

JUNCTION CASE

■ SPECIFIED ACCIDENTAL OVERLOAD

AREAS

■ FULLY INSULATED PACKAGE (UL

COMPLIANT)

■ EASY TO MOUNT

■ LOW INTERNAL PARASITIC INDUCTANCE

INDUSTRIAL APPLICATIONS:

■ MOTOR CONTROL

■ SMPS & UPS

■ WELDING EQUIPMENT

INTERNAL SCHEMATIC DIAGRAM

September 2003

ISOTOP

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CEV

Collector-Emitter Voltage (V

BE

= -5 V) 1000 V

V

CEO(sus)

Collector-Emitter Voltage (I

B

= 0) 450 V

V

EBO

Emitter-Base Voltage (I

C

= 0) 7 V

I

C

Collector Current 72 A

I

CM

Collector Peak Current (t

p

= 10 ms) 108 A

I

B

Base Current 8 A

I

BM

Base Peak Current (t

p

= 10 ms) 16 A

P

tot

Total Dissipation at T

c

= 25

o

C 250 W

V

isol

Insulation Withstand Voltage (RMS) from All

Four Terminals to Exernal Heatsink

2500 V

T

stg

Storage Temperature -55 to 150

o

C

T

j

Max. Operating Junction Temperature 150

o

C

®

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THERMAL DATA

R

thj-case

R

thc-h

Thermal Resistance Junction-case Max

Thermal Resistance Case-heatsink With Conductive

Grease Applied Max

0.5

0.05

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

case

= 25

o

C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CER

# Collector Cut-off

Current (R

BE

= 5 Ω)

V

CE

= V

CEV

V

CE

= V

CEV

T

j

= 100

o

C

1.5

22

mA

I

CEV

# Collector Cut-off

Current (V

BE

= -5)

V

CE

= V

CEV

V

CE

= V

CEV

T

j

= 100

o

C

1

15

mA

I

EBO

# Emitter Cut-off Current

(I

C

= 0)

V

EB

= 5 V 1 mA

V

CEO(SUS)

* Collector-Emitter

Sustaining Voltage

(I

B

= 0)

I

C

= 0.2 A L = 25 mH

V

clamp

= 450 V

450 V

h

FE

∗ DC Current Gain I

C

= 60 A V

CE

= 5 V 150

V

CE(sat)

∗ Collector-Emitter

Saturation Voltage

I

C

= 50 A I

B

= 1 A

I

C

= 50 A I

B

= 1 A T

j

= 100

o

C

I

C

= 60 A I

B

= 2.4 A

I

C

= 60 A I

B

= 2.4 A T

j

= 100

o

C

1.2

1.6

1.3

1.55

2

V

BE(sat)

∗ Base-Emitter

Saturation Voltage

I

C

= 60 A I

B

= 2.4 A

I

C

= 60 A I

B

= 2.4 A T

j

= 100

o

C

2.1

2.15 3

V

di

C

/dt Rate of Rise of

On-state Collector

V

CC

= 300 V R

C

= 0 t

p

= 3 µs

I

B1

= 3.6 A T

j

= 100

o

C

450 500 A/µs

V

CE

(3

µs)••

Collector-Emitter

Dynamic Voltage

V

CC

= 300 V R

C

= 5 Ω

I

B1

= 3.6 A T

j

= 100

o

C

47V

V

CE

(5

µs)••

Collector-Emitter

Dynamic Voltage

V

CC

= 300 V R

C

= 5 Ω

I

B1

= 3.6 A T

j

= 100

o

C

2.5 4 V

t

s

t

f

t

c

Storage Time

Fall Time

Cross-over Time

I

C

= 60 A V

CC

= 50 V

V

BB

= -5 V R

BB

= 0.3 Ω

V

clamp

= 450 V I

B1

= 2.4 A

L = 0.04 mH T

j

= 100

o

C

4.6

0.4

1.2

6

0.6

2

µs

V

CEW

Maximum Collector

Emitter Voltage

Without Snubber

I

CWoff

= 72 A I

B1

= 2.4 A

V

BB

= -5 V V

CC

= 50 V

L = 35 µH R

BB

= 0.3 Ω

T

j

= 125

o

C

450 V

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

# See test circuits in databook introduction

ESM6045AV

2/7

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Safe Operating Areas

Derating Curve

Collector Emitter Saturation Voltage

Thermal Impedance

Collector-emitter Voltage Versus

base-emitter Resistance

Base-Emitter Saturation Voltage

ESM6045AV

3/7

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ESM6045AV

ESM6045AV

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