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2SC5200

P1-P3P4-P6P7-P8
Preliminary data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
September 2009 Doc ID 16310 Rev 1 1/8
8
2SC5200
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage V
CEO
= 230 V
■ Typical f
T
= 30 MHz
Application
■ Audio power amplifier
Description
This device is a NPN transistor manufactured
using new BiT-LA (bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Figure 1. Internal schematic diagram
TO-264
1
2
3
Table 1. Device summary
Order code Marking Package Packaging
2SC5200 2SC5200 TO-264 Tube
www.st.com
Obsolete Product(s) - Obsolete Product(s)
Electrical ratings 2SC5200
2/8 Doc ID 16310 Rev 1
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CBO
Collector-base voltage (I
E
= 0) 230 V
V
CEO
Collector-emitter voltage (I
B
= 0) 230 V
V
EBO
Emitter-base voltage (I
C
= 0) 5 V
I
C
Collector current 15 A
I
CM
Collector peak current 30 A
P
TOT
Total dissipation at T
C
= 25 °C 150 W
T
STG
Storage temperature -55 to 150 °C
T
J
Operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case max 0.83 °C/W
Obsolete Product(s) - Obsolete Product(s)
2SC5200 Electrical characteristics
Doc ID 16310 Rev 1 3/8
2 Electrical characteristics
T
case
= 25 °C unless otherwise specified
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
Collector cut-off current
(I
E
= 0)
V
CB
= 230 V 5 µA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 5 V 5 µA
V
(BR)CEO
(1)
1. Pulsed: pulse duration = 300 µs, duty cycle ≤ 1.5%
Collector-emitter breakdown
voltage (I
B
= 0)
I
C
= 50 mA 230 V
V
(BR)CBO
Collector-base breakdown
voltage (I
E
= 0)
I
C
= 100 µA 230 V
V
(BR)EBO
(1)
Emitter-base breakdown
voltage (I
C
= 0)
I
E
= 1 mA 5 V
V
CE(sat)
(1)
Collector-emitter saturation
voltage
I
C
= 8 A I
B
= 800 mA 3 V
V
BE
Base-emitter voltage I
C
= 7 A V
CE
= 5 V 1.5 V
h
FE
DC current gain
I
C
= 1 A V
CE
= 5 V
I
C
= 7 A V
CE
= 5 V
55
35
80 120
t
on
t
s
t
f
Resistive load
Turn-on time
Storage time
Fall time
V
CC
= 60 V I
C
= 5A
I
B1
= -I
B2
= 0.5 A
0.24
4.7
0.6
µs
µs
µs
f
T
Transition frequency I
C
= 1 A V
CE
= 5 V 30 MHz
C
CBO
Collector-base capacitance
(I
E
= 0)
V
CB
= 10 V f = 1 MHz 150 pF
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P8

2SC5200

Mfr. #:
Buy 2SC5200
Manufacturer:
STMicroelectronics
Description:
TRANS NPN 230V 15A TO-264
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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