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MMST4401-7-F

P1-P3P4-P4
MMST4401
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
DS30084 Rev. 9 - 2 1 of 4
www.diodes.com
MMST4401
© Diodes Incorporated
E
B
C
• Epitaxial Planar Die Construction
• Complementary PNP T
ype Available (MMST4403)
• Ultra-Small Surface Mount Package
• Lead Free/R
oHS Compliant (Note 2)
• "Green" De
vice (Note 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "G
reen" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-
STD-020C
• Terminals: Solderable per MIL-ST
D-202, Method 208
• Terminal Connections: See Diagram
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking Information: K3X - See Page 4
• Ordering & Date
Code Information: See Page 4
• Weight: 0.006 grams (approx
imate)
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α
0° 8°
All Dimensions in mm
A
M
J
L
ED
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
40 V
Emitter-Base Voltage
V
EBO
6.0 V
Collector Current – Continuous (Note 1)
I
C
600 mA
Power Dissipation (Note 1)
P
d
200 mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θ
JA
625
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www
.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and new
er are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
B
C
H
K
BE
C
G
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
V
(BR)CBO
60
⎯
V
I
C
= 100μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
40
⎯
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
6.0
⎯
V
I
E
= 100μA, I
C
= 0
Collector Cutoff Current
I
CEX
⎯
100 nA
V
CE
= 35V, V
EB(OFF)
= 0.4V
Base Cutoff Current
I
BL
⎯
100 nA
V
CE
= 35V, V
EB(OFF)
= 0.4V
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
20
40
80
100
40
⎯
⎯
⎯
300
⎯
⎯
I
C
= 100μA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 150mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 2.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
0.40
0.75
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
V
BE(SAT)
0.75
⎯
0.95
1.2
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
ob
⎯
8.5 pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
eb
⎯
30 pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
1.0 15
kΩ
Voltage Feedback Ratio
h
re
0.1 8.0 x 10
-4
Small Signal Current Gain
h
fe
40 500
⎯
Output Admittance
h
oe
1.0 30
μS
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0MHz
Current Gain-Bandwith Product
f
T
250
⎯
MHz
V
CE
= 10V, I
C
= 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
⎯
15 ns
Rise Time
t
r
⎯
20 ns
V
CC
= 30V, I
C
= 150mA,
V
BE(OFF)
= 2.0V, I
B1
= 15mA
Storage Time
t
s
⎯
225 ns
Fall Time
t
r
⎯
30 ns
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
5. Short duration pulse test used to minimize self-heating effect.
0
50
100
25 50
75 100 125
150
175
200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
A
150
200
250
300
350
0
400
1
10
1,000
100
0.1
1
10 1,000
100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs
Collector Current
C
T = 125°C
A
DS30084 Rev. 9 - 2 2 of 4
www.diodes.com
MMST4401
© Diodes Incorporated
0.001 0.01
1
10
0.1
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I , BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
B
V,
C
O
LLE
C
T
O
R
-E
M
ITTE
R
V
O
LTA
G
E (V)
CE
I = 1mA
C
1.0
5.0
20
10
30
0.1
101.0
50
C
A
P
A
C
I
T
A
N
C
E (p
F
)
REVERSE VOLTAGE (V)
Fig. 3 Typical Capacitance
C
ibo
110
100
1,000
V,
C
O
LLE
C
T
O
R
T
O
EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 5 Collector Emitter Saturation Voltage
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.
5
I
I
C
B
= 10
10.1 10
100
V , BASE EMI
T
T
E
R
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 6 Base Emitter Voltage vs. Collector Current
C
0.2
0.3
0.4
0.6
0.5
0.8
0.7
1.0
0.9
V = 5V
CE
T = 25°C
A
T = -50°C
A
T = 150°C
A
1
10
100
1,000
110
I , COLLECTOR CURRENT (mA)
Fig. 7 Gain Bandwidth Product vs. Collector Current
C
f,
100
G
AI
N
BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V = 5V
CE
DS30084 Rev. 9 - 2 3 of 4
www.diodes.com
MMST4401
© Diodes Incorporated
P1-P3P4-P4

MMST4401-7-F

Mfr. #:
Buy MMST4401-7-F
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN BIPOLAR
Lifecycle:
New from this manufacturer.
Delivery:
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