ZXMP3A16G
Document Number DS33575 Rev. 6 - 2
4 of 8
www.diodes.com
March 2015
© Diodes Incorporated
ADVANCE INFO R MA T I O N
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Drain-Source Breakdown Voltage
BV
-30
V
I
= -250µA, V
= 0V
Zero Gate Voltage Drain Current
I
-1 µA
V
= -30V, V
= 0V
Gate-Source Leakage
I
±100
nA
V
= ±20V, V
= 0V
Gate Threshold Voltage
V
-1.0
V
I
= -250µA, V
= V
Static Drain-Source On-Resistance (Note 9)
R
DS (ON)
45
mΩ
V
= -10V, I
= -4.2A
70
V
= -4.5V, I
= -3.4A
Forward Transconductance (Notes 9 & 10)
g
9.2
S
V
= -15V, I
= -4.2A
Diode Forward Voltage (Note 9)
V
-0.85 -0.95 V
I
= -3.6A, V
= 0V, T
= +25°C
Reverse Recovery Time (Note 10)
t
21.7
ns
I
F
= -2A, di/dt = 100A/µs,
T
J
= +25°C
Reverse Rsecovery Charge (Note 10)
Q
16.1
nC
DYNAMIC CHARACTERISTICS (
Input Capacitance
C
1,022
pF
V
DS
= -15V, V
GS
= 0V
f = 1MHz
Output Capacitance
C
267
pF
Reverse Transfer Capacitance
C
229
pF
Total Gate Charge (Note 11)
Q
17.2
nC
V
= -5V
V
DS
= -15V
I
D
= -4.2A
Total Gate Charge (Note 11)
Q
29.6
nC
V
GS
= -10V
Gate-Source Charge (Note 11)
Q
2.8
nC
Gate-Drain Charge (Note 11)
Q
8.6
nC
Turn-On Delay Time (Note 11)
t
3.8
ns
V
DD
= -15V, V
GS
= -10V
I
D
= -1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 11)
t
6.5
ns
Turn-Off Delay Time (Note 11)
t
37.1
ns
Turn-Off Fall Time (Note 11)
t
21.4
ns
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
10 . For design aid only, not subject to production testing.
11 . Switching characteristics are independent of operating junction temperatures.
