TN2404K-T1-E3 Datasheet TN2404K-T1-E3, TN2404K-T1-GE3 | P1-P3

Vishay Siliconix

TN2404K/TN2404KL/BS107KL

Document Number: 72225

S12-1767-Rev. C, 23-Jul-12

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

N-Channel 240 V (D-S) MOSFET

FEATURES

• Low On-Resistance: 4 

• Secondary Breakdown Free: 260 V

• Low Power/Voltage Driven

• Low Input and Output Leakage

• Excellent Thermal Stability

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• High-Voltage Drivers: Relays,

Solenoids, Lamps, Hammers,

Displays, Transistors, etc.

• Telephone Mute Switches,

Ringer Circuits

• Power Supply, Converters

• Motor Control

BENEFITS

• Low Offset Voltage

• Full-Voltage Operation

• Easily Driven Without Buffer

• Low Error Voltage

• No High-Temperature “Run-Away”

Notes:

a. Pulse width limited by maximum junction temperature.

b. Surface mounted on an FR4 board.

PRODUCT SUMMARY

Part

Number

V

DS

(V)

R

DS(on)

()

V

GS(th)

(A)

I

D

(A)

Q

g

(Typ.)

TN2404K

240 4 at V

GS

= 10 V 0.8 to 2

0.2

4.87 nC

TN2404K,

BS107KL

0.3

TN2404KL

Device Marking

Front View

“S” TN

2404KL

xxyy

“S” = Siliconix Logo

xxyy = Date Code

BS107KL

Device Marking

Front View

“S” BS

107KL

xxyy

“S” = Siliconix Logo

xxyy = Date Code

TO-226AA

(TO-92)

Top View

S

D

G

1

2

3

TO-92-18RM

(TO-18 Lead Form)

Top View

D

S

G

1

2

3

TN2404K

G

S

D

Top View

2

3

TO-236

(SOT-23)

1

Marking Code: K1ywl

K1 = Part Number Code for TN2404K

y = Year Code

w = Week Code

l = Lot Traceability

ORDRING INFORMATION

Standard Partnumber Ordering Part Number Option

TN2404K

TN2404K-T1-E3 Lead (Pb) free

TN2404K-T1-GE3 Lead (Pb) free and Halogen free

TN2404KL

TN2404KL-TR1-E3

With Tape and Reel

Spool Option

BS107KL

BS107KL-TR1-E3

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol TN2404K TN2404KL/BS107KL Symbol

Drain-Source Voltage V

DS

240

V

Gate-Source Voltage V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

T

A

= 25 °C

I

D

0.2

0.3

A

T

A

= 70 °C

0.16

0.25

Pulsed Drain Current (t = 300 µs)

I

DM

0.8

1.4

Maximum Power Dissipation

T

A

= 25 °C

P

D

0.36

0.8

W

T

A

= 70 °C

0.23

0.51

Thermal Resistance Junction-to-Ambient

R

thJA

350

b

156

°C/W

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

www.vishay.com

2

Document Number: 72225

S12-1767-Rev. C, 23-Jul-12

Vishay Siliconix

TN2404K/TN2404KL/BS107KL

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Notes:

a. Pulse test; pulse width  300 µs, duty cycle  2 %

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions

Limits

Min. Typ.

a

Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= 100 µA

240 257

V

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

0.8 1.65 2

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 192 V, V

GS

= 0 V

1

µA

V

DS

= 192 V, V

GS

= 0 V, T

J

= 55 °C

10

On-State Drain Current

a

I

D(on)

V

DS

10 V, V

GS

= 10 V

0.8

A

V

DS

10 V, V

GS

= 4.5 V

0.5

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

10 V, I

D

= 0.3 A

2.2 4



V

GS

4.5 V, I

D

= 0.2 A

2.3 4

V

GS

2.5 V, I

D

= 0.1 A

2.4 6

Forward Transconductance

a

g

fs

V

DS

= 10 V, I

D

= 0.3 A

1.6 S

Diode Forward Voltage

V

SD

V

GS

= 0 V, I

S

= 0.3 A

0.8 1.2 V

Dynamic

b

Total Gate Charge

Q

g

V

DS

= 192 V, V

GS

= 10 V, I

D

= 0.5 A

4.87 8

nCGate-Source Charge

Q

gs

0.56

Gate-Drain Charge

Q

gd

1.53

Tur n - O n D e l ay T im e

t

d(on)

V

DD

= 60 V, R

L

= 200 

I

D

 0.3 A, V

GEN

= 10 V, R

g

= 25 

510

ns

Rise Time

t

r

12 20

Turn-Off Delay Time

t

d(off)

35 60

Fall Time

t

f

16 25

Document Number: 72225

S12-1767-Rev. C, 23-Jul-12

www.vishay.com

3

Vishay Siliconix

TN2404K/TN2404KL/BS107KL

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0.0

0.3

0.6

0.9

1.2

1.5

1.8

012345

V

GS

= 10 thru 3 V

V

DS

− Drain-to-Source Voltage (V)

−

Drain Current (A)I

D

2 V

2.5 V

− On-Resistance (R

DS(on)

)

0

1

2

3

4

5

0.0 0.2 0.4 0.6 0.8 1.0 1.2

I

D

− Drain Current (A)

V

GS

= 10 V

V

GS

= 4.5 V

0

2

4

6

8

10

012345

V

DS

= 192 V

I

D

= 0.5 A

− Gate-to-Source Voltage (V)

Q

g

− Total Gate Charge (nC)

V

GS

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0123456

T

C

= −55 C

125 C

25 C

V

GS

− Gate-to-Source Voltage (V)

− Drain Current (A)I

D

0

50

100

150

200

250

300

0 1020304050

V

DS

− Drain-to-Source Voltage (V)

C

rss

C

oss

C

iss

C −

Capacitance (pF)

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

−50 −25 0 25 50 75 100 125 150

V

GS

= 4.5 V

I

D

= 0.2 A

T

J

− Junction Temperature ( C)

V

GS

= 10 V

I

D

= 0.3 A

R

DS(on)

− On-Resiistance (Normalized)

TN2404K-T1-E3

TN2404K-T1-E3

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