RN1314∼RN1318
2014-03-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1314, RN1315, RN1316
RN1317, RN1318
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN2314 to RN2318
Equivalent Circuit and Bias Resister Values
Absolute Maximum Ratings
(Ta = 25
°
C)
Characteristic Symbol Rating Unit
Collector-base voltage V
CBO
50 V
Collector-emitter voltage
RN1314 to 1318
V
CEO
50 V
RN1314 5
RN1315 6
RN1316 7
RN1317 15
Emitter-base voltage
RN1318
V
EBO
25
V
Collector current I
C
100 mA
Collector power dissipation P
C
100 mW
Junction temperature T
j
150 °C
Storage temperature range
RN1314 to 1318
T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
JEDEC ―
JEITA SC-70
TOSHIBA 2-2E1A
Weight: 0.006g (typ.)
Unit: mm
Type No. R1 (kΩ) R2 (kΩ)
RN1314 1 10
RN1315 2.2 10
RN1316 4.7 10
RN1317 10 4.7
RN1318 47 10
Start of commercial production
2002-11
