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TC4432COA

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
TC4431/TC4432
DS21424D-page 4 © 2007 Microchip Technology Inc.
DC CHARACTERISTICS
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, Over operating temperature range with 4.5V ≤ V
DD
≤ 30V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage V
IH
2.4 — — V
Logic ‘0’, Low Input Voltage V
IL
——0.8V
Input Current (Note 1)I
IN
-10 — 10 µA 0V ≤ V
IN
≤ 12V
Output
High Output Voltage V
OH
V
DD
– 1.2 — — V I
OUT
= 100 mA
Low Output Voltage V
OL
— — 0.025 V
Output Resistance R
O
——12Ω I
OUT
= 10 mA, V
DD
= 30V
Switching Time (Note 2)
Rise Time t
R
— — 60 ns Figure 4-1
Fall Time t
F
— — 70 ns Figure 4-1
Delay Time t
D1
——100nsFigure 4-1
Delay Time t
D2
——110nsFigure 4-1
Power Supply
Power Supply Current I
S
—
—
—
—
6
0.7
mA V
IN
= 3V
V
IN
= 0V
Start-up Threshold V
S
—8.410V
Drop-out Threshold V
DO
77.7—VNote 3
Note 1: For inputs >12V, add a 1 kΩ resistor in series with the input. See Section 2.0 “Typical Performance
Curves” for input current graph.
2: Switching times are ensured by design.
3: For operation below 7V, pin 3 (LOCK DIS
) should be tied to ground to disable the lockout and start-up cir-
cuit, otherwise, pin 3 must be left floating.
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ V
DD
≤ 30V.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range (C) T
A
0—+70ºC
Specified Temperature Range (E) T
A
-40 — +85 ºC
Specified Temperature Range (V) T
A
-40 — +125 ºC
Maximum Junction Temperature T
J
——+150ºC
Storage Temperature Range T
A
-65 — +150 ºC
Package Thermal Resistances:
Thermal Resistance, 8L-SOIC θ
JA
—155—ºC/W
Thermal Resistance, 8L-PDIP θ
JA
—125—ºC/W
Thermal Resistance, 8L-CERDIP θ
JA
—150—ºC/W
© 2007 Microchip Technology Inc. DS21424D-page 5
TC4431/TC4432
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, T
A
= +25ºC with 4.5V ≤ V
DD
≤ 30V.
FIGURE 2-1: Supply Current vs.
Capacitive Load.
FIGURE 2-2: Input Current vs. Input
Voltage.
FIGURE 2-3: Rise/Fall Time vs. V
DD
.
FIGURE 2-4: t
D1
and t
D2
Delay vs. V
DD
.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
100 1000 10,000
2 MHz
600 kHz
200 kHz
20 kHz
900 kHz
V = 12V
DD
60
50
40
30
20
10
0
I
SUPPLY
(mA)
C
LOAD
(pF)
INPUT CURRENT (mA)
INPUT VOLTAGE (V
IN
)
50
3 6 12 15 18 21 24 27 309
40
30
20
10
0
WITHOUT 1 K RES.
45
35
25
15
5
WITH 1 K RES.
Time (nsec)
3 6 12 15 18 21 24 27 309
150
125
100
75
50
25
0
t
FALL
V
DD
(V)
C
LOAD
= 1000 pF
T
A
= +25
°C
t
RISE
TIME (nsec)
3 6 12 15 18 21 24 27 309
300
250
200
150
100
50
0
t
D2
t
D1
C
LOAD
= 1000 pF
T
A
= +25
°
C
V
DD
(V)
TC4431/TC4432
DS21424D-page 6 © 2007 Microchip Technology Inc.
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
3.1 Supply Input (V
DD
)
The V
DD
input is the bias supply input for the MOSFET
driver and is rated for 4.5V to 30V with respect to the
ground pins. The V
DD
input should be bypassed to
ground with a local ceramic capacitor. The value of this
capacitor should be chosen based on the capacitive
load that is being driven.
3.2 Control Input (IN)
The MOSFET driver input is a TTL/CMOS compatible
input with 250 mV of hysteresis between the high and
low threshold voltages. If an input signal level of greater
than 12V is applied to the device, a series current
limiting resistor is recommended.
3.3 Lockout Disable (LOCK DIS)
The lockout pin enables/disables the undervoltage
lockout feature of the device. If undervoltage lockout is
desired (output is not enabled until the bias voltage
reaches 8.4V (typical) on the rising edge and is
disabled when the bias voltage reaches 7.7V (typical)
on the falling edge), the lockout pin should be left float-
ing. If operation below 7V is desired, the lockout pin
should be tied to ground.
3.4 Ground (GND)
The ground pins are the return path for the bias current
and for the high peak currents which discharge the load
capacitor. Both ground pins should be used to ensure
proper operation. The ground pins should be tied into a
ground plane or have short traces to the bias supply
source return.
3.5 Drive Output (OUT)
The TC4431/TC4432 devices have individual source
and sink output pins. This feature can be used to adjust
the rise and fall time independently by adding separate
charge and discharge resistors external to the device.
Pin 7 (source output) can source 3 A peak currents into
capacitive loads and pin 6 (sink output) can sink 1.5 A
peak currents from a capacitive load.
Pin No. Symbol Description
1V
DD
Supply Input, 4.5V to 30V
2 IN TTL/CMOS Compatible Input
3
LOCK DIS
Input Pin, Enable/Disable for UV Lockout
4
GND Ground
5 GND Ground
6 OUT Drive Output, Pull Down
7 OUT Drive Output, Pull Up
8V
DD
Supply Input, 4.5V to 30V
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

TC4432COA

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Manufacturer:
Microchip Technology
Description:
Gate Drivers 1.5A Sngl 30V N-Inv
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