STW20NB50
N - CHANNEL 500V - 0.22Ω - 20A - TO-247
PowerMESH MOSFET
■
TYPICAL R
DS(on)
= 0.22
Ω
■
EXTREMELY HIGH dv/dt CAPABILITY
■
±
30V GATE TO SOURCE VOLTAGE RATING
■
100% AVALANCHE TESTED
■
REPETITIVE AVALANCHE DATA AT 100
o
C
■
VERY LOW INTRINSIC CAPACITANCES
■
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage technology,
STMicroelectronics has designed an advanced
family of power Mosfets with outstanding
performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
R
DS
(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
■
SWITCH MODE POWER SUPPLIES (SMPS)
■
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
®
INTERNAL SCHEMATIC DIAGRAM
October 1999
1
2
3
TO-247
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
= 0) 500 V
V
DGR
Drain- gate Voltage (R
GS
= 20 kΩ)
500 V
V
GS
Gate-source Voltage ± 30 V
I
D
Drain Current (continuous) at T
c
= 25
o
C20A
I
D
Drain Current (continuous) at T
c
= 100
o
C12.7A
I
DM
(•) Drain Current (pulsed) 80 A
P
tot
Total Dissipation at T
c
= 25
o
C 250 W
Derating Factor 2 W/
o
C
dv/dt(
1
) Peak Diode Recovery voltage slope 4 V/ns
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
(
•
) Pulse width limited by safe operating area (
1
) I
SD
≤
20A, di/dt
≤
200 A/
µ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE V
DSS
R
DS(on)
I
D
STW20NB50 500 V < 0.25 Ω 20 A
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