DMN2041L-7 Datasheet DMN2041L-7 | P1-P3

DMN2041L

Document number: DS31962 Rev. 2 - 2

1 of 6

www.diodes.com

October 2013

DMN2041L

NEW PRODUCT

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT-23

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Terminals Connections: See Diagram Below

 Weight: 0.008 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMN2041L-7 SOT-23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015

Code W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

TOP VIEW

Internal Schematic TOP VIEW

Source

Gate

Drain

MN9 = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

= Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or = Year (ex: A = 2013)

M = Month (ex: 9 = September)

MN9

Chengdu A/T Site

Shanghai A/T Site

MN9

DMN2041L

Document number: DS31962 Rev. 2 - 2

2 of 6

www.diodes.com

October 2013

DMN2041L

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage

DSS

20 V

Gate-Source Voltage

GSS

±12 V

Continuous Drain Current (Note 5)

Steady

State

= +25°C

= +70°C

6.4

4.5

Pulsed Drain Current (Note 6)

30 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 5)

0.78 W

Thermal Resistance, Junction to Ambient @ T

= +25°C R

θJA

161 °C/W

Operating and Storage Temperature Range

STG

-55 to +150 °C

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.

6. Repetitive rating, pulse width limited by junction temperature.

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

DSS

20 — — V

= 0V, I

= 250μA

Zero Gate Voltage Drain Current T

= 25°C I

DSS

— —

1.0 µA

= 20V, V

= 0V

Gate-Source Leakage

GSS

— —

±100 nA

= ±12V, V

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

GS(th)

0.5 — 1.2 V

= V

, I

= 250μA

Static Drain-Source On-Resistance

DS (ON)

—

mΩ

= 4.5V, I

= 6.0A

= 2.5V, I

= 5.2A

Forward Transfer Admittance

—

6 — S

= 10V, I

= 6A

Diode Forward Voltage

—

0.7 1.2 V

= 0V, I

= 1.7A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

iss

—

550

—

= 10V, V

= 0V,

f = 1.0MHz

Output Capacitance

oss

—

Reverse Transfer Capacitance

rss

—

Gate Resistance

—

1.34

—

Ω

= 0V, V

= 0V, f = 1MHz

Total Gate Charge (10V)

—

15.6

—

= 10V, V

= 10V, I

= 6A

Total Gate Charge (4.5V)

—

7.2

—

= 4.5V, V

= 10V, I

= 6A

Gate-Source Charge

—

1.0

—

Gate-Drain Charge

—

1.9

—

Turn-On Delay Time

D(on)

—

4.69

—

= 10V, V

GEN

= 4.5V,

GEN

= 1Ω, I

= 6.7A

Turn-On Rise Time

—

13.19

—

Turn-Off Delay Time

D(off)

—

22.10

—

Turn-Off Fall Time

—

6.43

—

Notes: 7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMN2041L

Document number: DS31962 Rev. 2 - 2

3 of 6

www.diodes.com

October 2013

DMN2041L

NEW PRODUCT

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

Fig. 1 Typical Output Characteristic

V , DRAIN-SOURCE VOLTAGE (V)

I, D

(A)

V = 2.0V

V = 3.0V

V = 4.5V

V = 10V

V = 2.5V

V = 1.5V

0 0.5 1 1.5 2 2.5 3

Fig. 2 Typical Transfer Characteristic

V , GATE-SOURCE VOLTAGE (V)

I, D

AIN

(A)

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

V = 5V

0.01

0.02

0.03

0.04

0.05

0.06

048121620

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)



V = 10V

V = 4.5V

V = 2.5V

V = 1.8V

0.02

0.04

0.06

04 8121620

I , DRAIN CURRENT (A)

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

, D

AIN-S

N-

ESIS

E ( )

DS(ON)



T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

V = 4.5V

0.6

0.8

1.0

1.2

1.4

1.6

Fig. 5 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DSON

V = 2.5V

I = 5.0A

V = 4.5V

I = 10A

0.02

0.04

0.06

0.08

Fig. 6 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

R , DRAIN-SOURCE ON-RESISTANCE ( )

DSON



V = 4.5V

I = 10A

V = 2.5V

I = 5.0A

P1-P3 P4-P6

DMN2041L-7

Mfr. #:

Buy DMN2041L-7

Manufacturer:

Diodes Incorporated

Description:

MOSFET MOSFET,N-CHANNEL

Lifecycle:

New from this manufacturer.

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DMN2041L-7