DF2B18FU,H3F Datasheet DF2B18FU,H3F | P1-P3

DF2B18FU

1

ESD Protection Diodes Silicon Epitaxial Planar

DF2B18FU

Start of commercial production

2015-05

1.

1. Applications

Applications

• ESD Protection

Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other

purpose, including, but not limited to, voltage regulation.

2.

2. Features

Features

(1) AEC-Q101 qualified (Note 1)

Note 1: For detail information, please contact to our sales.

3.

3. Packaging and Internal Circuit

Packaging and Internal Circuit

USC

1: Pin 1

2: Pin 2

2015-05-13

Rev.1.0

DF2B18FU

2

4.

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

a

= 25

= 25



)

)

Characteristics

Electrostatic discharge voltage (IEC61000-4-2)(Contact)

Electrostatic discharge voltage(IEC61000-4-2)(Air)

Electrostatic discharge voltage(ISO10605)(Contact)

Electrostatic discharge voltage(ISO10605)(Air)

Peak pulse power

Peak pulse current

Junction temperature

Storage temperature

Symbol

V

ESD

V

ESD

P

PK

I

PP

T

j

T

stg

Note

(Note 1)

(Note 2)

(Note 3)

Rating

±30

80

2.5

150

-55 to 150

Unit

kV

W

A



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: According to IEC61000-4-2.

Note 2: According to ISO10605. (@ C = 330 pF, R = 2 kΩ)

Note 3: According to IEC61000-4-5.

2015-05-13

Rev.1.0

DF2B18FU

3

5.

5. Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, T

a

= 25

= 25



)

)

V

RWM

: Working peak reverse

voltage

V

BR

: Reverse breakdown voltage

I

BR

: Reverse breakdown current

I

R

: Reverse current

V

C

: Clamp voltage

I

PP

: Peak pulse current

R

DYN

: Dynamic resistance

Fig.

Fig. 5.1

5.1

5.1 Definitions of Electrical Characteristics

Definitions of Electrical Characteristics

Characteristics

Reverse breakdown voltage

Reverse current

Clamp voltage

Dynamic resistance

Total capacitance

Symbol

V

BR

I

R

V

C

R

DYN

C

t

Note

(Note 1), (Note 3)

(Note 2)

Test Condition

I

BR

= 1 mA

V

RWM

= 12 V

I

PP

= 1 A

I

PP

= 2.5 A



V

R

= 0 V, f = 1 MHz

Min

16.2



Typ.



19

23

0.8

9

Max

20.5

0.1



33



10

Unit

V

µA

V

Ω

pF

Note 1: Based on IEC61000-4-5 8/20 µs pulse.

Note 2: TLP parameter: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns,

extraction of dynamic resistance using a least-squares fit of TLP characteristics at I

PP

between 8 A to 16 A.

Note 3: Guaranteed by design.

2015-05-13

Rev.1.0

DF2B18FU,H3F

DF2B18FU,H3F

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