NTMFS4852N
http://onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) Q
g
, TOTAL GATE CHARGE (nC)
3020151050
0
2000
3000
4000
5000
6000
50 603010 200
0
2
4
5
9
10
11
C, CAPACITANCE (pF)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 25°C
C
oss
C
iss
C
rss
40
8
7
6
3
1
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
T
J
= 25°C
V
GS
Q
gd
Q
gs
1000
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
1000
1.00.80.70.60.50.4
0
5
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) T
J
, STARTING JUNCTION TEMPERATURE(°C)
1001010.01
0.01
1
10
100
1000
75 1501251005025
0
100
200
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
V
DD
= 15 V
V
GS
= 10 V
I
D
= 15 A
t
f
t
r
t
d(off)
t
d(on)
10
15
20
30
V
GS
= 0 V
T
J
= 25°C
10 ms
100 ms
1 ms
10 ms
dc
V
GS
= 30 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
I
D
= 49 A
300
400
25
V
GS
= 0 V
70 80
Q
T
0.9
0.1
0.1
