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MC74LVX244DT

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 4
1 Publication Order Number:
MC74LVX244/D
MC74LVX244
Octal Bus Buffer
With 5V−Tolerant Inputs
The MC74LVX244 is an advanced high speed CMOS
non−inverting 3−state octal bus buffer and has two active low output
enables. It is also designed to work with 3−state memory address
drivers, etc. The inputs tolerate voltages up to 7.0 V, allowing the
interface of 5.0 V systems to 3.0 V systems.
Features
• High Speed: t
PD
= 4.7 ns (Typ) at V
CC
= 3.3 V
• Low Power Dissipation: I
CC
= 4 mA (Max) at T
A
= 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Low Noise: V
OLP
= 0.8 V (Max)
• Pin and Function Compatible with Other Standard Logic Families
• Latchup Performance Exceeds 300 mA
• ESD Performance:
Human Body Model > 2000 V;
Machine Model > 200 V
• These Devices are Pb−Free and are RoHS Compliant
Figure 1. Logic Diagram
1OE
1
1D0
2
1O0
18
1D1
4
1O1
16
1D2
6
1O2
14
1D3
8
1O3
12
2OE
19
2D0
17
2O0
3
2D1
15
2O1
5
2D2
13
2O2
7
2D3
11
2O3
9
1OE, 2OE 1Dn, 2Dn 1On, 2On
L
L
H
L
H
X
L
H
Z
INPUTS OUTPUTS
FUNCTION TABLE
PIN NAMES
Function
Output Enable Inputs
Data Inputs
3−State Outputs
Pins
nOE
1Dn, 2Dn
1On, 2On
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
1
20
MARKING DIAGRAMS
SOIC−20
DW SUFFIX
CASE 751D
LVX244
AWLYYWWG
TSSOP−20
DT SUFFIX
CASE 948E
20
1
LVX244 = Specific Device Code
A = Assembly Location
WL, L = Wafer Lot
Y = Year
WW, W = Work Week
G or G = Pb−Free Package
(Note: Microdot may be in either location)
LVX
244
ALYWG
G
SOIC−20
TSSOP−20
PIN ASSIGNMENT
1920 18 17 16 15 14
21 34567
V
CC
13
8
12
9
11
10
2OE
1O0 2D0 1O1 2D1 1O2 2D2 1O3 2D3
1OE 1D0 2O0 1D1 2O1 1D2 2O2 1D3 2O3 GND
20−Lead (Top View)
MC74LVX244
http://onsemi.com
2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage –0.5 to +7.0 V
V
in
DC Input Voltage –0.5 to +7.0 V
V
out
DC Output Voltage –0.5 to V
CC
+0.5 V
I
IK
Input Diode Current −20 mA
I
OK
Output Diode Current ±20 mA
I
out
DC Output Current, per Pin ±25 mA
I
CC
DC Supply Current, V
CC
and GND Pins ±75 mA
P
D
Power Dissipation 180 mW
T
stg
Storage Temperature –65 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage 2.0 3.6 V
V
in
DC Input Voltage 0 5.5 V
V
out
DC Output Voltage 0 V
CC
V
T
A
Operating Temperature, All Package Types −40 +85
_C
Dt/DV
Input Rise and Fall Time 0 100 ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
Symbo
l
Parameter Test Conditions
V
CC
V
T
A
= 25°C T
A
= −40 to 85°C
Unit
Min Typ Max Min Max
V
IH
High−Level Input Voltage 2.0
3.0
3.6
1.5
2.0
2.4
1.5
2.0
2.4
V
V
IL
Low−Level Input Voltage 2.0
3.0
3.6
0.5
0.8
0.8
0.5
0.8
0.8
V
V
OH
High−Level Output Voltage
(V
in
= V
IH
or V
IL
)
I
OH
= −50mA
I
OH
= −50mA
I
OH
= −4mA
2.0
3.0
3.0
1.9
2.9
2.58
2.0
3.0
1.9
2.9
2.48
V
V
OL
Low−Level Output Voltage
(V
in
= V
IH
or V
IL
)
I
OL
= 50mA
I
OL
= 50mA
I
OL
= 4mA
2.0
3.0
3.0
0.0
0.0
0.1
0.1
0.36
0.1
0.1
0.44
V
I
in
Input Leakage Current V
in
= 5.5V or GND 3.6 ±0.1 ±1.0
mA
I
OZ
Maximum 3−State Leakage Current V
in
= V
IL
or V
IH
V
out
= V
CC
or GND
3.6 ±0.2
5
±2.5
mA
I
CC
Quiescent Supply Current V
in
= V
CC
or GND 3.6 4.0 40.0
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
MC74LVX244
http://onsemi.com
3
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3.0ns)
Symbo
l
Parameter Test Conditions
T
A
= 25°C T
A
= −40 to 85°C
Unit
Min Typ Max Min Max
t
PLH
,
t
PHL
Propagation Delay
Input to Output
V
CC
= 2.7V C
L
= 15pF
C
L
= 50pF
6.1
8.6
11.4
14.9
1.0
1.0
13.5
17.0
ns
V
CC
= 3.3 ± 0.3V C
L
= 15pF
C
L
= 50pF
4.7
7.2
7.1
10.6
1.0
1.0
8.5
12.0
t
PZL
,
t
PZH
Output Enable Time to
High and Low Level
V
CC
= 2.7V C
L
= 15pF
R
L
= 1kW C
L
= 50pF
7.1
9.6
13.8
17.3
1.0
1.0
16.5
20.0
ns
V
CC
= 3.3 ± 0.3V C
L
= 15pF
R
L
= 1kW C
L
= 50pF
5.5
8.0
8.8
12.3
1.0
1.0
10.5
14.0
t
PLZ
,
t
PHZ
Output Disable Time From
High and Low Level
V
CC
= 2.7V C
L
= 50pF
R
L
= 1kW
11.6 16.0 1.0 19.0 ns
V
CC
= 3.3 ± 0.3V C
L
= 50pF
R
L
= 1kW
9.7 11.4 1.0 13.0
t
OSHL
t
OSLH
Output−to−Output Skew
(Note 1)
V
CC
= 2.7V C
L
= 50pF
V
CC
= 3.3 ± 0.3V C
L
= 50pF
1.5
1.5
1.5
1.5
ns
1. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.
The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (t
OSHL
) or LOW−to−HIGH (t
OSLH
); parameter
guaranteed by design.
CAPACITIVE CHARACTERISTICS
Symbo
l
Parameter
T
A
= 25°C T
A
= −40 to 85°C
Unit
Min Typ Max Min Max
Cin Input Capacitance 4 10 10 pF
C
out
Maximum Three−State Output Capacitance 6 pF
C
PD
Power Dissipation Capacitance (Note 2) 19 pF
2. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
/8 (per bit). C
PD
is used to determine the no−load
dynamic power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
NOISE CHARACTERISTICS (Input t
r
= t
f
= 3.0ns, C
L
= 50pF, V
CC
= 3.3V, Measured in SOIC Package)
Symbo
l
Characteristic
T
A
= 25°C
Unit
Typ Max
V
OLP
Quiet Output Maximum Dynamic V
OL
0.5 0.8 V
V
OLV
Quiet Output Minimum Dynamic V
OL
−0.5 −0.8 V
V
IHD
Minimum High Level Dynamic Input Voltage 2.0 V
V
ILD
Maximum Low Level Dynamic Input Voltage 0.8 V
P1-P3P4-P6

MC74LVX244DT

Mfr. #:
Buy MC74LVX244DT
Manufacturer:
ON Semiconductor
Description:
Buffers & Line Drivers 2-3.6V Octal 3-State
Lifecycle:
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