©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSC2500
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
* PW≤10ms, Duty Cycle≤30%
Electrical Characteristics
T
a
=25°C unless otherwise noted
h
FE1
Classification
Symbol Parameter Ratings Units
V
CBO
Collector-Base Voltage 30 V
V
CES
Collector-Emitter Voltage 30 V
V
CEO
Collector-Emitter Voltage 10 V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current (DC) 2 A
I
CP
* Collector Current (Pulse) 5 A
I
B
Base Current 0.5 A
P
C
Collector Power Dissipation 900 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current V
CB
=30V, I
E
=0 100 nA
I
EBO
Emitter Cut-off Current V
EB
=6V, I
C
=0 100 nA
BV
CBO
Collector-Emitter Breakdown Voltage I
C
=10mA, I
B
=0 10 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=1mA, I
C
=0 6 V
h
FE 1
h
FE 2
DC Current Gain V
CE
=1V, I
C
=0.5A
V
CE
=1V, I
C
=2A
140
70 200
600
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=2A, I
B
=50mA 0.2 0.5 V
V
BE
(on) Base-Emitter On Voltage V
CE
=1V, I
C
=2A 0.86 1.5 V
f
T
Current Gain Bandwidth Product V
CE
=1V, I
C
=0.5A 150 MHz
C
ob
Output Capacitance V
CB
=10V, I
E
=0, f=1MHz 27 pF
Classification A B C D
h
FE1
140 ~ 240 200 ~ 330 300 ~ 450 420 ~ 600
KSC2500
Medium Power Amplifier & Low Saturation
TO-92L
1
1. Emitter 2. Collector 3. Base
