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ES2F-E3/52T

P1-P3P4-P5
ES2F, ES2G
www.vishay.com
Vishay General Semiconductor
Revision: 25-Feb-16
1
Document Number: 88588
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, and telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
2.0 A
V
RRM
300 V, 400 V
I
FSM
50 A
t
rr
35 ns
V
F
at I
F
1.1 V
T
J
max. 150 °C
Package DO-214AA (SMB)
Diode variations Single die
DO-214AA (SMB)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL ES2F ES2G UNIT
Device marking code EF EG
Maximum repetitive peak reverse voltage V
RRM
300 400 V
Working peak reverse voltage V
RWM
225 300 V
Maximum RMS voltage V
RMS
210 280 V
Maximum average forward rectified current at T
L
= 110 °C I
F(AV)
2.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
50 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
ES2F, ES2G
www.vishay.com
Vishay General Semiconductor
Revision: 25-Feb-16
2
Document Number: 88588
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1)
Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL ES2F ES2G UNIT
Maximum instantaneous forward voltage 2.0 A V
F
(1)
1.1 V
Maximum reverse current at V
RRM
T
A
= 25 °C
I
R
10
µA
T
A
= 100 °C 200
Maximum reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
35 ns
Maximum reverse recovery time
I
F
= 1.0 A, dI/dt = 100 A/μs,
V
R
= 30 V, I
rr
= 0.1 I
RM
t
rr
50 ns
Maximum reverse recovery current
I
F
= 1.0 A, dI/dt = 100 A/μs,
V
R
= 30 V, I
rr
= 0.1 I
RM
I
RM
3.0 A
Maximum stored charge
I
F
= 1.0 A, dI/dt = 100 A/μs,
V
R
= 30 V, I
rr
= 0.1 I
RM
Q
rr
50 nC
Typical junction capacitance 4.0 V, 1 MHz C
J
15 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL ES2F ES2G UNIT
Maximum thermal resistance
R
JA
(1)
75
°C/W
R
JL
(1)
25
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
ES2G-E3/52T 0.096 52T 750 7" diameter plastic tape and reel
ES2G-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel
ES2GHE3/52T
(1)
0.096 52T 750 7" diameter plastic tape and reel
ES2GHE3/5BT
(1)
0.096 5BT 3200 13" diameter plastic tape and reel
ES2GHE3_A/H
(1)
0.096 H 750 7" diameter plastic tape and reel
ES2GHE3_A/I
(1)
0.096 I 3200 13" diameter plastic tape and reel
ES2F, ES2G
www.vishay.com
Vishay General Semiconductor
Revision: 25-Feb-16
3
Document Number: 88588
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Reverse Switching Characteristics
Fig. 6 - Typical Junction Capacitance
0
3.0
80 90 100 110 120 130 140 150
2.0
1.0
Resistive or Inductive Load
Average Forward Rectified Current (A)
Lead Temperature (°C)
0
10
20
30
40
50
60
1 10010
8.3 ms Single Half Sine-Wave
at T
L
= 110 °C
Peak Forward Surge Current (A)
Number of Cycles at 60 Hz
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
100
10
1
0.1
0.01
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0.2 0.4 0.6 0.8 1 1.2 1.4
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
020406080 100
1000
100
10
1
0.1
Instantaneous Reverse Leakage
Current (µA)
25 50 75 100 125 150 175
80
40
120
160
200
0
t
rr
Q
rr
at 5 A, 50 A/µs
at 2 A, 20 A/µs
at 5 A, 50 A/µs
at 2 A, 20 A/µs
at 1 A, 100 A/µs
at 1 A, 100 A/µs
Recovered Stored Charge/
Reverse Recovery Time nC/ns
Junction Temperature (°C)
100
10
1
0.1 1 10 100 1000
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
P1-P3P4-P5

ES2F-E3/52T

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Buy ES2F-E3/52T
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 2.0 Amp 300 Volt
Lifecycle:
New from this manufacturer.
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