FDS7779Z Rev C1 (W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= –250 µA
–30 V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= –250 µA,Referenced to 25°C
–22
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= –24 V, V
GS
= 0 V –1
µA
I
GSS
Gate–Body Leakage V
GS
= ±20 V, V
DS
= 0 V ±10
µA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= –250 µA
–1 –1.5 –3 V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= –250 µA,Referenced to 25°C
5
mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= –10 V, I
D
= –16 A
V
GS
= –4.5 V, I
D
= –15 A
V
GS
= –10 V, I
D
=–16A, T
J
=125°C
6
9
8
7.2
11.5
11
mΩ
I
D(on)
On–State Drain Current V
GS
= –4.5 V, V
DS
= –5 V –50 A
g
FS
Forward Transconductance V
DS
= –5 V, I
D
= –13 A 43 S
Dynamic Characteristics
C
iss
Input Capacitance 3800 pF
C
oss
Output Capacitance 980 pF
C
rss
Reverse Transfer Capacitance
V
DS
= –15 V, V
GS
= 0 V,
f = 1.0 MHz
490 pF
R
G
Gate Resistance V
GS
= 15 mV, f = 1.0 MHz 3
Ω
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 20 36 ns
t
r
Turn–On Rise Time 9 18 ns
t
d(off)
Turn–Off Delay Time 100 160 ns
t
f
Turn–Off Fall Time
V
DD
= –15 V, I
D
= –1 A,
V
GS
= –10 V, R
GEN
= 6 Ω
55 88 ns
Q
g
Total Gate Charge 70 98 nC
Q
gs
Gate–Source Charge 10 nC
Q
gd
Gate–Drain Charge
V
DS
= –15 V, I
D
= –16 A,
V
GS
= –10 V
16 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current –2.5 A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= –2.5 A (Note 2) –0.7 –1.2 V
t
RR
Reverse Recovery Time
39
ns
Q
RR
Reverse Recovery Charge
I
F
= –16 A,
d
iF
/d
t
= 100 A/µs (Note 2)
24 nC
FDS7779Z
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 50°C/W (10 sec)
62.5°C/W steady state
when mounted on a
1in
2
pad of 2 oz
copper
b) 105°C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
