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AUIRFSL8403

P1-P3P4-P6P7-P9P10-P12P13-P13
AUIRFS/SL8403
4 www.irf.com © 2013 International Rectifier May 08 2013
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical C
OSS
Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
0.0 0.5 1.0 1.5 2.0
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
1msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100μsec
DC
-60 -20 20 60 100 140 180
T
J
, Temperature ( °C )
40
41
42
43
44
45
46
47
48
49
50
V
(
B
R
)
D
S
S
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
(
V
)
Id = 5.0mA
0 5 10 15 20 25 30 35 40 45
V
DS,
Drain-to-Source Voltage (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
E
n
e
r
g
y
(
μ
J
)
V
DS
= 0V to 32V
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
25
50
75
100
125
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
50
100
150
200
250
300
350
400
450
500
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 12A
23A
BOTTOM 70A
AUIRFS/SL8403
5 www.irf.com © 2013 International Rectifier May 08 2013
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 14. Typical Avalanche Current vs.Pulsewidth
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = DT/ Z
thJC
I
av
=
2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
°
C
/
W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
A
v
a
l
a
n
c
h
e
C
u
r
r
e
n
t
(
A
)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart = 25°C (Single Pulse)
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
40
80
120
E
A
R
,
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
I
D
= 70A
AUIRFS/SL8403
6 www.irf.com © 2013 International Rectifier May 08 2013
Fig. 18 - Typical Recovery Current vs. di
f
/dt
Fig 17. Threshold Voltage vs. Temperature
Fig. 19 - Typical Stored Charge vs. di
f
/dt
Fig. 20 - Typical Recovery Current vs. di
f
/dt
Fig. 21 - Typical Stored Charge vs. di
f
/dt
Fig 16. On-Resistance vs. Gate Voltage
2 4 6 8 10 12 14 16 18 20
V
GS,
Gate -to -Source Voltage (V)
0
2
4
6
8
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
I
D
= 70A
T
J
= 25°C
T
J
= 125°C
-75 -25 25 75 125 175 225
T
J
, Temperature ( °C )
0.5
1.5
2.5
3.5
4.5
V
G
S
(
t
h
)
,
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
ID = 100μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
0 200 400 600 800 1000
di
F
/dt (A/μs)
0
1
2
3
4
5
6
I
R
R
M
(
A
)
I
F
= 46A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/μs)
0
10
20
30
40
50
60
70
Q
R
R
(
n
C
)
I
F
= 46A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/μs)
0
1
2
3
4
5
I
R
R
M
(
A
)
I
F
= 70A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/μs)
0
10
20
30
40
50
60
Q
R
R
(
n
C
)
I
F
= 70A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
P1-P3P4-P6P7-P9P10-P12P13-P13

AUIRFSL8403

Mfr. #:
Buy AUIRFSL8403
Manufacturer:
Infineon / IR
Description:
MOSFET Auto 40V N-Ch FET 2.6mOhm 123A
Lifecycle:
New from this manufacturer.
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