SI4493DY-T1-E3

Vishay Siliconix
Si4493DY
Document Number: 72256
S09-0705-Rev. C, 27-Apr-09
www.vishay.com
1
P-Channel 2.5-V (G-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET
®
Power MOSFET
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Load Switch
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
- 20
0.00775 at V
GS
= - 4.5 V
- 14
0.01225 at V
GS
= - 2.5 V
- 11
S
S
D
D
D
S
G
D
SO-8
5
6
7
8
T op V i e w
2
3
4
1
Ordering Information: Si4493DY-T1-E3 (Lead (Pb)-free)
Si4493DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFE
T
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
- 20
V
Gate-Source Voltage
V
GS
± 12
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
- 14 - 10
A
T
A
= 70 °C
- 11 - 8
Pulsed Drain Current
I
DM
- 50
Continuous Source Current (Diode Conduction)
a
I
S
- 2.7 - 1.36
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
3.0 1.5
W
T
A
= 70 °C
1.9 0.95
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t 10 s
R
thJA
33 42
°C/W
Steady State 70 84
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
16 21
www.vishay.com
2
Document Number: 72256
S09-0705-Rev. C, 27-Apr-09
Vishay Siliconix
Si4493DY
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 0.6 - 1.4 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 12 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 20 V, V
GS
= 0 V
- 1
µA
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 70 °C
- 10
On-State Drain Current
a
I
D(on)
V
DS
= - 5 V, V
GS
= - 4.5 V
- 30 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 14 A
0.0065 0.00775
Ω
V
GS
= - 2.5 V, I
D
= - 11 A
0.010 0.01225
Forward Transconductance
a
g
fs
V
DS
= - 10 V, I
D
= - 14 A
60 S
Diode Forward Voltage
a
V
SD
I
S
= - 2.7 A, V
GS
= 0 V
- 0.68 - 1.1 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 14 A
65 110
nCGate-Source Charge
Q
gs
14.5
Gate-Drain Charge
Q
gd
21
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 10 V, R
L
= 10 Ω
I
D
- 1 A, V
GEN
= - 4.5 V, R
g
= 6 Ω
110 165
ns
Rise Time
t
r
150 225
Turn-Off Delay Time
t
d(off)
220 330
Fall Time
t
f
140 210
Gate Resistance
R
g
3.8 Ω
Source-Drain Reverse Recovery Time
t
rr
I
F
= - 2.7 A, dI/dt = 100 A/µs
85 130 ns
Output Characteristics
0
10
20
30
40
50
012345
V
GS
= 5 V thru 2.5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
2 V
Transfer Characteristics
0
10
20
30
40
50
0.0 0.4 0.8 1.2 1.6 2.0 2.4
T
C
= 125 °C
- 55 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
Document Number: 72256
S09-0705-Rev. C, 27-Apr-09
www.vishay.com
3
Vishay Siliconix
Si4493DY
TYPICAL CHARACTERISTICS 25 °C unless noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
R
DS(on)
0.000
0.003
0.006
0.009
0.012
0.015
0 1020304050
I
D
- Drain Current (A)
V
GS
= 2.5 V
V
GS
= 4.5 V
- On-Resistance (Ω)
0
1
2
3
4
5
0 1428425670
V
DS
= 10 V
I
D
= 14 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 25 °C
100
10
0.1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 150 °C
1
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
1800
3600
5400
7200
9000
048121620
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 14 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
0.000
0.006
0.012
0.018
0.024
0.030
012345678
I
D
= 14 A
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)

SI4493DY-T1-E3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI4477DY-GE3
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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