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2SK4150TZ-E

P1-P3P4-P6P7-P7
2SK4150 Preliminary
REJ03G1909-0300 Rev.3.00 Page 4 of 6
May 27, 2010
0.1 110
1000
100
10
1
0 50 100 150
100
1000
10
400
0
16
300 12
200 8
100 4
4812 16 20
0
1
0.1
V
GS
= 0
f = 1 MHz
Ta = 25°C
Ciss
Crss
I
D
= 0.4 A
Ta = 25°C
V
DS
V
GS
Reverse Drain Current I
DR
(A)
Reverse Recovery Time t
rr
(ns)
Body-Drain Diode Reverse
Recovery Time (Typical)
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nC)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Dynamic Input Characteristics (Typical)
di / dt = 100 A / μs
V
GS
= 0, Ta = 25°C
V
DD
= 200 V
100 V
50 V
V
DD
= 200 V
100 V
50 V
0
0.4 0.8 1.21.6 2.0
1.0
0.4
Source to Drain Voltage V
SD
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Reverse Drain Current I
DR
(A)
V
GS
= 0 V
Ta = 25°C
Pulse Test
2.5
2.0
1.5
1.0
0.5
-25 0 50 100 15025 12575
0
Case Temperature Tc (°C)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
Gate to Source Cutoff Voltage
V
GS(off)
(V)
0.2
0.6
0.8
Coss
V
DS
= 10 V
0.1 mA
I
D
= 10 mA
1 mA
2SK4150 Preliminary
REJ03G1909-0300 Rev.3.00 Page 5 of 6
May 27, 2010
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
90%
10%
t
f
Switching Time Test Circuit Waveform
0.3
0.1
0.03
0.01
3
1
10 μ
100 μ 1 m10 m100 m 1 100010010
Pulse Width PW (s)
Normalized Transient Thermal Impedance
γ
s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
DM
P
PW
T
D =
PW
T
θch – a(t) = γs (t) • θch – a
θch – a = 166.7°C/W, Ta = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Vin Monitor
D.U.T.
Vin
4 V
R
L
V
DD
= 125 V
Vout
Monitor
10 Ω
2SK4150 Preliminary
REJ03G1909-0300 Rev.3.00 Page 6 of 6
May 27, 2010
Package Dimensions
0.60 Max
0.55 Max
4.8 ± 0.3
3.8 ± 0.3
5.0 ± 0.2
0.7
2.3 Max
12.7 Min
0.5 Max
1.27
2.54
Previous Code
PRSS0003DA-A TO-92(1) / TO-92(1)V
MASS[Typ.]
0.25gSC-43A
RENESAS CodeJEITA Package Code
Unit: mm
Package Name
TO-92(1)
Ordering Information
Part No. Quantity Shipping Container
2SK4150TZ-E 2500 pcs Hold Box, Radial Taping
Note: Leads is forming applied as following figure.
12.7
24.7 max.
19.0
16.0
18.0
9.0
6.35
4.012.7
2.5 2.5
Unit: mm
P1-P3P4-P6P7-P7

2SK4150TZ-E

Mfr. #:
Buy 2SK4150TZ-E
Manufacturer:
Renesas Electronics
Description:
MOSFET MOSFET
Lifecycle:
New from this manufacturer.
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