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PBSS5160T,215

P1-P3P4-P6P7-P9P10-P12
PBSS5160T_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 15 January 2010 3 of 11
NXP Semiconductors
PBSS5160T
60 V, 1 A PNP low V
CEsat
(BISS) transistor
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Operated under pulse conditions: duty cycle δ≤20 %, pulse width t
p
≤ 10 ms.
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-270mW
[2]
-400mW
[1][3]
-1.25W
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
(1) FR4 PCB, mounting pad for collector 1 cm
2
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
0 40 80 160
P
tot
(mW)
(1)
(2)
500
0
400
120
300
200
100
mle128
T
amb
(°C)
PBSS5160T_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 15 January 2010 4 of 11
NXP Semiconductors
PBSS5160T
60 V, 1 A PNP low V
CEsat
(BISS) transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Operated under pulse conditions: duty cycle δ≤20 %, pulse width t
p
≤ 10 ms.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
--465K/W
[2]
--312K/W
[1][3]
--100K/W
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance as a function of pulse duration; typical values
mle127
10
3
10
2
10
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
Z
th
(K/W)
t
p
(s)
10 10
2
10
3
δ = 1
0.75
0.33
0.05
0.02
0.01
0
0.5
0.2
0.1
PBSS5160T_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 15 January 2010 5 of 11
NXP Semiconductors
PBSS5160T
60 V, 1 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −60 V; I
E
=0A - - −100 nA
V
CB
= −60 V; I
E
=0A;
T
j
=150°C
--−50 μA
I
CES
collector-emitter
cut-off current
V
CE
= −60 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −5V
I
C
= −1 mA 200 350 -
I
C
= −500 mA
[1]
150 250 -
I
C
= −1A
[1]
100 160 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −100 mA; I
B
= −1mA - −110 −160 mV
I
C
= −500 mA;
I
B
= −50 mA
- −120 −175 mV
I
C
= −1A; I
B
= −100 mA
[1]
- −220 −330 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −1A; I
B
= −100 mA
[1]
- 220 330 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −1A; I
B
= −50 mA - −0.95 −1.1 V
V
BEon
base-emitter
turn-on voltage
V
CE
= −5V; I
C
= −1A - −0.82 −0.9 V
f
T
transition frequency V
CE
= −10 V;
I
C
= −50 mA; f = 100 MHz
150 220 - MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
-915pF
P1-P3P4-P6P7-P9P10-P12

PBSS5160T,215

Mfr. #:
Buy PBSS5160T,215
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS BISS TAPE-7
Lifecycle:
New from this manufacturer.
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