IR2086STRPBF

V
CC (max)
25V
V
offset(max)
100Vdc
High/low side
output freq (f
osc
) 500kHz
Output Current (I
O
) +/-1.2A
High/low side pulse
edge matching +/- 25ns
HIGH SPEED, 100V, SELF OSCILLATING 50% DUTY CYCLE,
FULL-BRIDGE DRIVER
Features
Simple primary side control solution to enable full-bridge
DC-Bus Converters for 48V distributed systems with reduced
component count and board space.
Frequency and dead time set by two external components
Maximum 500KHz per channel output with 50% duty cycle
Adjustable dead time 50nsec ~ 200nsec
Floating channel designed for bootstrap operation up to +100Vdc
High and low side pulse width matching to +/- 25nsec
Overcurrent protection with adjustable hiccup period.
Undervoltage lockout and internal soft start
Part also available leadfree
IR2086S(PbF)
Data Sheet PD No.60226 revB
Package
Description
The IR2086S(PbF) is a self oscillating full-bridge controller and driver IC
with 50% duty cycle ideally suited for 36V-75V full-bridge DC Bus
Converters.
Dead time can be controlled through proper selection of C
T
and can range
from 50 to 200nsec. Internal soft start increases pulse width on power up
and maintains equal pulse widths for the high and low outputs throughout
the start up cycle. Undervoltage lockout prevents operation if Vcc is less than
7.5 Vdc. Over current shutdown occurs when the voltage on the Cs pin
exceeds 200mV. Restart after overcurrent trip can be delayed by adjusting
the external capacitor. The delay time ranges from 10µs to 1s.
Typical
Connection
(Refer to Lead Assign-
ments for correct pin
configuration). This/
These diagram(s)
show electrical connec-
tions only. Please refer
to our Application
Notes and DesignTips
for proper circuit board
layout.
16-Lead SOIC
Product Summary
RSENSE
IR2086S
CD**
LO1
HO1
VB1
COM2*
VS1
VB2
HO2
VS2
VCC
LO2
*COM2 must be shorted to COM1 for proper operation
**CD is optional
VBUSS (100 VDC MAX)
DELAY
CS
COM1
CT
RT
CT
VCC (9 ~15V)
2
IR2086S(PbF)
www.irf.com
Absolute Maximum Ratings
V
BIAS
(V
CC
, V
BS
) = 12V, C
L
= 1000 pF, and T
A
= 25°C unless otherwise specified.
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are absolute voltages referenced to COM. All currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Note1: Care should be taken to avoid output switching conditions where the Vs node flies inductively below ground by
more than 5V.
Symbol Definition Min. Max. Units
V
CC
Low side supply voltage -0.3 25
V
B1,2
High side floating supply voltage -0.3 150
V
S1,2
High side floating supply offset voltage V
B1,2
- 25 V
B1,2
+ 0.3
V
HO1,2
High side floating output voltage V
B1,2
- 0.3 V
B1,2
+ 0.3
V
LO1,2
Low side output voltage -0.3 V
CC
+ 0.3
V
CT
CT pin voltage -0.3 V
CC
+ 0.3
V
CS
Cs pin voltage -0.3 V
CC
+ 0.3
V
DELAY
Delay pin voltage -0.3 V
CC
+ 0.3
dV
S
/dt Allowable offset voltage slew rate -50 +50 V/ns
I
CC
Supply current 40 mA
P
D
Package power dissipation
(16-lead SOIC) 1.0
W
Rth
JA
Thermal resistance, junction to ambient (16-lead SOIC) 200 °C/W
T
J
Junction temperature -55 150
T
S
Storage temperature -55 150
T
L
Lead temperature (soldering, 10 seconds) 300
Vdc
°C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
V
B1,2
High side floating supply voltage
9.5 15
V
S1,2
Steady state high side floating supply offset voltage -5 100
V
CC
Supply voltage 9.5 15
I
CC
Supply current 1 mA
R
T
Timing resistor 10 100 Kohms
C
T
Timing capacitor 47 1000 pF
fmax Operating frequency (per channel) — 500
KHz
T
j
Junction temperature -40 125 °C
Vdc
Symbol Definition Min. Max. Units
3
IR2086S(PbF)
www.irf.com
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 12V, C
L
= 1000 pF, and T
A
= 25°C unless otherwise specified.
Symbol Definition Min. Typ. Max. Units Test Conditions
t
r
Turn-on rise time 40 60
t
f
Turn-off fall time 20 30
fout Per channel output frequency 440 500 580 KHz
tdt High/low output dead time 50
PM High/low pulse width matching 25 V
S
= 0V ~ 100V
t
dcs
Overcurrent shut down delay 200
t
restart
Overcurrent restart delay 0.5 sec Vcc =15V, Cd=100nF
nsec
V
S
= 0V
Ct=100pF,
Rt=10Kohm
nsec
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 12V, C
L
= 1000 pF and T
A
= 25°C unless otherwise specified.
Symbol Definition Min. Typ. Max. Units Test Conditions
V
OH1,2
High level output voltage, (V
BIAS
- V
O
) 1.5
V
OL1,2
Low level output voltage 0.1
I
leak
Offset supply leakage current 50
I
QBS
Quiescent V
BS
supply current 150
I
QCC
Quiescent V
CC
supply current 1.75 mA
V
CS+ Overcurrent shutdown threshold
200 270 350 mV
U
VCC+
Undervoltage positive going threshold 6.5 7.25 8.0
U
VCC-
Undervoltage negative going threshold 6.0 6.8 7.7
I
O+
Output high short circuit current 1.2
I
O-
Output low short circuit current 1.2
V
A
V
µA

IR2086STRPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
Gate Drivers Hi Spd 100V 50% Duty Cycle Full Brdg Drvr
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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