TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL J-FET
Equivalent To MIL-PRF-19500/385
T4-LDS-0002 Rev. 2 (090603) Page 1 of 2
DEVICES LEVELS
2N4856 2N4858 2N4860
MQ = JAN Equivalent
2N4857 2N4859 2N4861
MX = JANTX Equivalent
MV = JANTXV Equivalent
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol
2N4856
2N4857
2N4858
2N4859
2N4860
2N4861
Unit
Gate-Source Voltage V
GS
-40 -30 V
Drain-Source Voltage V
DS
40 30 V
Drain-Gate Voltage V
DG
40 30 V
Gate Current I
G
50 mA
Power Dissipation
T
A
= +25°C
(1)
T
C
= +25°C
(2)
P
T
0.36
1.8
W
W
Operating Junction & Storage Temperature Range T
j
, T
stg
-65 to + 200 °C
(1) Derate linearly 2.06 mW/°C for T
A
> +25°C.
(2) Derate linearly 10.3 mW/°C for T
C
> +25°C.
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
Gate-Source Breakdown Voltage
V
DS
= 0, I
G
= -1.0μA dc
2N4856, 2N4857, 2N4858
2N4859, 2N4860, 2N4861
V
(BR)GSS
-40
-30
Vdc
Gate-Source “Off” State Voltage
V
DS
= 15V dc
I
D
= 0.5ηA dc
2N4856, 2N4859
2N4857, 2N4860
2N4858, 2N4861
V
GS(off)
-4.0
-2.0
-0.8
-10
-6.0
-4.0
Vdc
Gate Reverse Current
V
DS
= 0, V
GS
= -20V dc
V
DS
= 0, V
GS
= -15V dc
2N4856, 2N4857, 2N4858
2N4859, 2N4860, 2N4861
I
GSS
-0.25
-0.25
ηA
Drain Current Cutoff
V
GS
= -10V dc, V
DS
= 15V dc
I
D(off)
0.25
ηA
Drain Current Zero Gate Voltage
V
GS
= 0, V
DS
= 15V dc 2N4856, 2N4859
2N4857, 2N4860
2N4858, 2N4861
I
DSS
50
20
8.0
175
100
80
mA
Drain-Source “On” State Voltage
V
GS
= 0, I
D
= 20mA dc
V
GS
= 0, I
D
= 10mA dc
V
GS
= 0, I
D
= 5.0mA dc
2N4856, 2N4859
2N4857, 2N4860
2N4858, 2N4861
V
DS(on)
0.75
0.50
0.50
Vdc
Static Drain – Source “On” State Resistance
V
GS
= 0, I
D
= 1.0mA dc
2N4856, 2N4859
2N4857, 2N4860
2N4858, 2N4861
r
ds(on)
25
40
60
Ω
TO-18
(TO-206AA)
