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VS-ST230C12C1

P1-P3P4-P6P7-P8
VS-ST230C Series
www.vishay.com
Vishay Semiconductors
Revision: 16-Dec-13
4
Document Number: 94398
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
40
50
60
70
80
90
100
110
120
130
0 40 80 120 160 200 240 280 320
30°
60°
90°
120°
180°
Conduction Angle
ST230C..C Series
(Single Side Cooled)
R (DC) = 0.17 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500
DC
30°
60°
90°
120°
180°
Conduction Period
ST230C..C Series
(Single Side Cooled)
R (DC) = 0.17 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600
30°
60°
90°
120°
180°
Conduction Angle
ST230C..C Series
(Double Side Cooled)
R (DC) = 0.08 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800
DC
30°
60°
90°
120°
180°
Conduction Period
ST230C..C Series
(Double Side Cooled)
R (DC) = 0.08 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
0
100
200
300
400
500
600
700
800
900
1000
1100
0 100 200 300 400 500 600
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
ST230C..C Series
T = 125°C
J
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
0
200
400
600
800
1000
1200
1400
0 200 400 600 800 1000
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
ST230C..C Series
T = 125°C
J
VS-ST230C Series
www.vishay.com
Vishay Semiconductors
Revision: 16-Dec-13
5
Document Number: 94398
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
2000
2500
3000
3500
4000
4500
5000
5500
110100
ST230C..C Series
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Pulse Train Duration (s)
Peak Half Sine Wave On-state Current (A)
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
0.01 0.1 1
Versus Pulse Train Duration. Control
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
ST230C..C Series
Initial Tj = 125°C
No Voltage Reapplied
Rated Vrrm Reapplied
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4.5
ST230C..C Series
Tj = 25°C
Tj = 125°C
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z (K/W)
thJ-hs
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Steady State Value
R = 0.17 K/W
(Single Side Cooled)
R = 0.08 K/W
(Double Side Cooled)
(DC Operation)
thJ-hs
thJ-hs
ST230C..C Series
VS-ST230C Series
www.vishay.com
Vishay Semiconductors
Revision: 16-Dec-13
6
Document Number: 94398
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj=25
°C
Tj=125
°
C
Tj=-40
°
C
(2)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Rectangular gate pulse
Device: ST230C..C Series
(3)(1)
(4)
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95074
- Thyristor
- Essential part number
- 0 = Converter grade
- C = Ceramic PUK
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
- C = PUK case TO-200AB (A-PUK)
- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
- Critical dV/dt:
None = 500 V/µs (Standard selection)
L = 1000 V/µs (Special selection)
Device code
51 32 4 6 7 8 9
STVS- 23 0 C 20 C 1 -
2
3
4
5
6
7
8
9
1 - Vishay Semiconductors product
P1-P3P4-P6P7-P8

VS-ST230C12C1

Mfr. #:
Buy VS-ST230C12C1
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules 1200 Volt 410 Amp
Lifecycle:
New from this manufacturer.
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