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NUP412VP5T5G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2009
October, 2017 − Rev. 3
1 Publication Order Number:
NUP412VP5/D
NUP412VP5
ESD Protection Diode Array
Quad, Low Capacitance
This integrated surge protection device is designed for applications
requiring transient overvoltage protection. It is intended to be used in
sensitive equipment such as wireless headsets, PDAs, digital cameras,
computers, printers, communication systems, and other applications.
The integrated design provides very effective and reliable protection
for four separate lines using only one package. This device is ideal for
situations where board space is at a premium.
Features
• ESD Protection: IEC61000−4−2: Level 4
• Four Separate Unidirectional Configurations for Protection
• Low Leakage Current < 1 mA @ 9 V
• Small SOT−953 SMT Package
• Low Capacitance
• These are Pb−Free Devices
Benefits
• Provides Protection for ESD Industry Standards: IEC 61000, HBM
• Protects Four Lines Against Transient Voltage Conditions
• Minimize Power Consumption of the System
• Minimize PCB Board Space
Typical Applications
• Cellular and Portable Electronics
• Serial and Parallel Ports
• Microprocessor Based Equipment
• Notebooks, Desktops, Servers
SOT−953
CASE 526AE
5
4
1
2
3
MARKING DIAGRAM
www.onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
NUP412VP5T5G SOT−953
(Pb−Free)
8000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
2 = Specific Device Code
M = Date & Assembly Code
2M
1
SCALE 4:1
NUP412VP5
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
QV
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
Uni−Directional
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Value Unit
Peak Power Dissipation (8 X 20 ms @ T
A
= 25°C) (Note 1)
P
PK
18 W
Thermal Resistance Junction−to−Ambient
Above 25°C, Derate
R
q
JA
560
4.5
°C/W
mW/°C
Maximum Junction Temperature T
Jmax
150 °C
Operating Junction and Storage Temperature Range T
J
T
stg
−55 to +150 °C
Lead Solder Temperature (10 seconds duration) T
L
260 °C
Human Body Model (HBM)
Machine Model (MM)
ESD 8000
400
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Device
Device
Marking
Breakdown Voltage
V
BR
@ 5 mA (Volts)
Leakage Current
I
RM
@ V
RM
Typ Capacitance
@ 0 V Bias (pF)
(Note 2)
Typ Capacitance
@ 3 V Bias (pF)
(Note 2)
Min Nom Max V
RWM
I
RWM
(mA)
Typ Max Typ Max
NUP412VP5 (Note 3) 2 11.4 12 12.7 9.0 0.5 6.5 10 3.5 5.0
2. Capacitance of one diode at f = 1 MHz, T
A
= 25°C.
3. V
BR
at 5 mA.
NUP412VP5
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Reverse Leakage versus
Temperature
T, TEMPERATURE (°C)
I
R
, REVERSE LEAKAGE (mA)
Figure 2. Capacitance
BIAS VOLTAGE (V)
TYPICAL CAPACITANCE (pF)
1 MHz FREQUENCY
V
F
, FORWARD VOLTAGE (V)
1.81.61.41.21.00.80.6
0.1
0.01
0.001
1
I
F
, FORWARD CURRENT (A)
T
A
= 25°C
Figure 3. 8 × 20 ms Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0
020406080
t, TIME (ms)
% OF PEAK PULSE CURRENT
t
r
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE I
RSM
/2 @ 20 ms
t
P
PEAK VALUE I
RSM
@ 8 ms
Figure 4. Forward Voltage
Figure 5. Power Derating Curve
T
A
, AMBIENT TEMPERATURE (°C)
1501251007550250
90
80
70
60
50
40
30
20
10
0
100
110
% OF RATED POWER OR I
PP
0
0.0005
0.001
0.0015
0.002
0.0025
0.003
0.0035
−60 −40 −20 0 20 40 60 80 100 120 140 160
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
P1-P3P4-P4

NUP412VP5T5G

Mfr. #:
Buy NUP412VP5T5G
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors LOW CAP ZR QD ARRY
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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