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UMC4NTR

P1-P3
EMC4 / UMC4N / FMC4A
Tr
ansistors
Power management
(dual digital transistors)
EMC4 / UMC4N / FMC4A
z
zz
z
Features
1) Both the DTA114Y chip and DTC114E chip in a EMT
or UMT or SMT package.
2) Ideal for power switch circuits.
3) Mounting cost and area can be cut in half.
z
zz
zStructure
Epitaxial planar type
NPN / PNP silicon transistor (Built-in resistor type.)
z
zz
z
Equivalent circuit
EMC4 / UMC4N FMC4A
(3) (2) (1)
(4) (5)
DTr1
DTr2
R1
R2
R1
R2
(3) (4) (5)
(2) (1)
DTr1
DTr2
R1
R2
R1
R2
R1
=
47k
Ω
DTr1
R2
=
47k
Ω
R1
=
10k
Ω
DTr2
R2
=
47k
Ω
R1
=
47k
Ω
DTr1
R2
=
47k
Ω
R1
=
10k
Ω
DTr2
R2
=
47k
Ω
z
zz
zPackaging specifications
Package
Code TR T148
3000 3000
Taping
Basic ordering
unit (pieces)
UMC4N
T2R
8000
EMC4
FMC4A
Type
z
zz
z
External dimensions
(Units : mm)
ROHM : EMT5
EMC4
Each lead has same dimensions
ROHM : UMT5
EIAJ : SC-88A
UMC4N
Each lead has same dimensions
Abbreviated symbol : C4
Abbreviated symbol : C4
Abbreviated symbol : C4
Each lead has same dimensions
0to0.1
1.1
0.8
0.3to0.6
0.15
1.6
2.8
2.9
0.95
1.9
(
4
)
(
5
)
(
1
)
0.3
(
3
)
0.95
(
2
)
ROHM : SMT5
EIAJ : SC-74A
FMC4A
0.22
1.2
1.6
(
1
)
(
2
)
(
3
)
(
5
)
(
4
)
0.13
0.5
0.5
0.5
1.0
1.6
0.9
0.15
0to0.1
0.1Min.
0.7
2.1
1.3
0.65
2.0
(
4
)
(
1
)
(
5
)
0.2
1.25
(
2
)
0.65
(
3
)
EMC4 / UMC4N / FMC4A
Tr
ansistors
z
zz
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
Limits
DTr
1
DTr
2
Unit
V
CC
50 V
40
V
V
IN
I
C (Max.)
−10
I
O
100
30
−50
−40
6
−100
−100
mA
Tj 150
Tstg −55∼+150
Pd
EMC4, UMC4N 150 (TOTAL)
mW
∗
1
FM4A 300 (TOTAL)
∗
2
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
Supply voltage
Input voltage
Output current
Junction temperature
Storage temperature
Power
dissipation
˚C
˚C
z
zz
z
Electrical characteristics
(Ta = 25°C)
DTr
1
Parameter Symbol
I
I
R
1
G
I
R
2
/R
1
Min.
−
3
−
−
−
32.9
68
0.8
−
−
0.1
−
−
47
−
1
0.5
−
0.3
0.18
0.5
61.1
−
1.2
V
V
CC
=
5V, I
O
=
100µA
V
O
=
0.3V, I
O
=
2mA
I
O
=
10mA, I
I
=
0.5mA
V
I
=
5V
V
CC
=
50V, V
I
=
0V
−
V
O
=
5V, I
O
=
5mA
V
mA
µA
kΩ
−
−−
Typ. Max. Unit Conditions
f
T
− 250 − V
CE
=
10mA, I
E
=
−5mA, f
=
100MHz
∗
MHz
∗
Transition frequency of the device
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Transition frequency
Resistance ratio
V
I (off)
V
I (on)
V
O (on)
I
O (off)
DTr
2
Parameter Symbol
I
I
R
1
G
I
R
2
/R
1
Min.
−
−1.4
−
−
−
7
68
3.7
−
−
−0.1
−
−
10
−
4.7
−0.3
−
−0.3
−0.88
−0.5
13
−
5.7
V
V
CC
=
−5V, I
O
=
−100µA
V
O
=
−0.3V, I
O
=
−1mA
I
O
=
−5mA, I
I
=
−0.25mA
V
I
=
−5V
V
CC
=
−50V, V
I
=
0V
−
V
O
=
−5V, I
O
=
−5mA
V
mA
µA
kΩ
−
−−
Typ. Max. Unit Conditions
f
T
− 250 − V
CE
=
10mA, I
E
=
−5mA, f
=
100MHz
∗
MHz
∗
Transition frequency of the device
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Transition frequency
Resistance ratio
V
I (off)
V
I (on)
V
O (on)
I
O (off)
EMC4 / UMC4N / FMC4A
Tr
ansistors
z
zz
zElectrical characteristic curves
DTr
1
(NPN)
V
O=
0.3V
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
100
50
20
10
5
2
1
500m
200m
100m
INPUT VOLTAGE : V
I (on)
(V)
OUTPUT CURRENT : I
O
(A)
25˚C
100˚C
Ta
=−
40˚C
Fig.1 Input voltage vs. output current
(ON characteristics)
V
CC
=
5V
0.5 1.0 1.5 2.0 2.5 3.00
10m
5m
2m
1m
500
µ
200
µ
100
µ
50
µ
20
µ
10
µ
5
µ
1
µ
2
µ
INPUT VOLTAGE : V
I (off)
(V)
OUTPUT CURRENT : Io (A)
Ta
=
100
˚C
25˚C
−
40˚C
Fig.2 Output current vs. input voltage
(OFF characteristics)
OUTPUT CURRENT : IO
(A)
DC CURRENT GAIN : GI
VO=5V
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
1k
500
200
100
50
20
10
5
2
1
Ta=100˚C
25˚C
−
40˚C
Fig.3 DC current gain vs. output
current
DTr
2
(PNP)
OUTPUT VOLTAGE : V
O (on)
(V)
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
l
O
/l
I
=20
OUTPUT CURRENT : I
O
(A)
Ta=100˚C
25˚C
−
40˚C
Fig.4 Output voltage vs. output
current
V
O
=−
0.3V
INPUT VOLTAGE : V
I (on)
(V)
OUTPUT CURRENT : I
O
(A)
−100
−50
−20
−10
−200m
−100m
−100µ
−1m
−10m
−100m
−200µ
−2m −20m−500µ−5m −50m
−5
−2
−1
−500m
25˚C
100˚C
Ta=−40˚C
Fig.5 Input voltage vs. output current
(ON characteristics)
VCC
=
−
5V
0 −3.0
−
10m
−
1
µ
−
2m
−
5m
−
1m
−
200
µ
−
500
µ
−
100
µ
−
20
µ
−
50
µ
−
10
µ
−
2
µ
−
5
µ
−0.5 −1.0 −1.5 −2.0 −2.5
INPUT VOLTAGE : V
I (off)
(V)
OUTPUT CURRENT : Io
(A)
Ta=100˚C
25˚C
−
40˚C
Fig.6 Output current vs. input voltage
(OFF characteristics)
VO=−5V
DC CURRENT GAIN : GI
OUTPUT CURRENT : IO (A)
1k
500
200
100
50
20
10
5
2
1
−100µ−1m −10m −100m
−200µ−2m −20m−500µ−5m −50m
Ta=100˚C
25˚C
−
40˚C
Fig.7 DC current gain vs. output
current
l
O
/l
I
=20
OUTPUT VOLTAGE : V
O (on)
(V)
−
500m
−
1000m
−
200m
−
100m
−
10m
−
50m
−
5m
−
20m
−
2m
−
1m
OUTPUT CURRENT : I
O
(A)
Ta=100˚C
25˚C
−
40˚C
−100µ
−1m
−10m
−100m
−200µ
−2m −20m−500µ−5m −50m
Fig.8 Output voltage vs. output
current
P1-P3

UMC4NTR

Mfr. #:
Buy UMC4NTR
Manufacturer:
ROHM Semiconductor
Description:
Bipolar Transistors - Pre-Biased DUAL DIG SMT PNP/NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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