PHB20N06T_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 November 2009 5 of 12
NXP Semiconductors
PHB20N06T
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=0.25mA; V
GS
=0V; T
j
=-55°C 50 - - V
I
D
=0.25mA; V
GS
=0V; T
j
=25°C 55 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
= V
GS
; T
j
=175°C;
see Figure 10
1- - V
I
D
=1mA; V
DS
= V
GS
; T
j
=-55°C;
see Figure 10
--4.4V
I
D
=1mA; V
DS
= V
GS
; T
j
=25°C;
see Figure 10
234V
I
DSS
drain leakage current V
DS
=55V; V
GS
=0V; T
j
= 25 °C - 0.05 10 µA
V
DS
=55V; V
GS
=0V; T
j
= 175 °C - - 500 µA
I
GSS
gate leakage current V
GS
=20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=10A; T
j
= 175 °C;
see Figure 11 and 12
--150mΩ
V
GS
=10V; I
D
=10A; T
j
=25°C;
see Figure 11
and 12
-6475mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=25A; V
DS
=44V; V
GS
=10V;
T
j
= 25 °C;see Figure 13
-11-nC
Q
GS
gate-source charge - 3 - nC
Q
GD
gate-drain charge - 6 - nC
C
iss
input capacitance V
DS
=25V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C;see Figure 14
- 320 483 pF
C
oss
output capacitance - 92 113 pF
C
rss
reverse transfer
capacitance
-6490pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
=1.2Ω; V
GS
=10V;
R
G(ext)
=10Ω; T
j
=25°C
-10-ns
t
r
rise time - 50 - ns
t
d(off)
turn-off delay time - 70 - ns
t
f
fall time - 40 - ns
L
D
internal drain
inductance
from drain lead 6 mm from package to
centre of die; T
j
=25°C
-4.5-nH
from upper edge of drain mounting base to
centre of die; T
j
=25°C
-2.5-nH
L
S
internal source
inductance
from source lead to source bond pad;
T
j
=25°C
-7.5-nH
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 15
- 0.85 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs; V
GS
=-10V;
V
DS
=30V; T
j
=25°C
-32-ns
Q
r
recovered charge - 120 - nC