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STTH1210DI
P1-P3
P4-P6
P7-P9
P10-P11
Character
istics
STTH1210
4/11
Figur
e 5.
Peak reverse recovery
current
versus dI
F
/dt (typical values)
Figure
6.
Reverse recovery time versu
s dI
F
/dt
(typical values)
I(
A
)
RM
0
5
10
15
20
25
30
35
0
50
100
150
200
250
300
350
400
450
500
V
R
=600V
T
j
=125°C
I
F
= 2 x I
F(AV)
I
F
= I
F(AV)
I
F
=0.5 x I
F(AV)
dI
/dt(A/µs)
F
t
(ns)
rr
0
50
100
150
200
250
300
350
400
450
500
0
50
100
150
200
250
300
350
400
450
500
V
R
=600V
T
j
=125°C
I
F
=0.5 x I
F(AV)
I
F
= 2 x I
F(AV)
I
F
=I
F(AV
)
dI
/dt(A/µs)
F
Figur
e 7.
Reverse recovery charg
es
versus dI
F
/dt (typical values)
Figure 8.
Softness factor ver
s
us
dI
F
/dt
(typical values)
Q
(µC)
rr
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
50
100
150
200
250
300
350
400
450
500
I
F
=0.5 x I
F(AV)
I
F
= I
F(AV)
I
F
= 2 x I
F(AV)
V
R
=600V
T
j
=125°C
dI
/dt(A/µs)
F
S factor
1.0
1.5
2.0
2.5
3.0
0
50
100
150
200
250
300
350
400
450
500
I
F
=2
x
I
F(AV)
V
R
=600V
T
j
=125°C
dI
/dt(A/µs)
F
Figure 9.
Rel
ativ
e variations of d
ynamic
parameter
s
ve
rsus junction
temperature
Figure 10.
T
ransi
ent peak f
o
rward
voltage
versus dI
F
/dt (typ
ical values)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
25
50
75
100
125
I
RM
Q
RR
S
factor
I
F
= I
F(AV)
V
R
=600V
Reference: T
j
=125°C
t
RR
T
(°C)
j
V
(V)
FP
0
5
10
15
20
25
30
35
40
45
0
100
200
300
400
500
I
F
= I
F(AV)
T
j
=125°C
dI
/dt(A/µs)
F
STTH1210
Character
istics
5/11
Figure 11.
Forwa
rd recovery time vers
us
dI
F
/dt (typical v
alues)
Figure
12.
Junction capa
citance versus
reverse v
oltage
applied (typica
l
valu
es
)
Figure 13.
Thermal resistance junction to
ambient versus coppe
r surface
under tab (Epo
xy printed circuit
board FR4,
e
cu
= 35 µm
)
t
(ns)
fr
200
300
400
500
600
700
0
100
200
300
400
500
I
F
= I
F(AV)
V
FR
= 1.5 x V
F
max.
T
j
=125°C
dI
/dt(A/µs)
F
C(pF)
1
10
100
1
10
100
1000
F=1MHz
V
osc
=30mV
RMS
T
j
=25°C
V
(V)
R
R
(°C/W)
th(j-a)
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
40
D²P
AK
S
(cm²)
CU
Package
information
STTH1210
6/11
2 P
acka
ge
information
Epoxy meets UL
94, V0
Cooling
method: by conductio
n (C)
Recomme
nded torque value: 0.55
Nm (T
O-2
20A
C, TC-220Ins, TO-220FP
A
C)
Maximum t
orque v
alue: 0.
7 Nm (T
O-2
20A
C, T
O-220I
ns
, T
O
-220FP
A
C)
T
able 5.
T0-220A
C dimensions
REF
.
DIMENSIONS
Millime
ters
Inches
Min.
Ma
x.
Min
.
Max
.
A
4.40
4.60
0.173
0
.181
C
1.23
1.32
0.048
0
.051
D
2.40
2.72
0.094
0
.107
E
0.49
0.70
0.019
0
.027
F
0.61
0.88
0.024
0
.034
F1
1.14
1.70
0.044
0
.066
G
4.95
5
.1
5
0.194
0.202
H2
1
0.00
10.40
0.393
0.409
L2
16.40 typ
.
0.645 ty
p.
L4
13.0
0
14.00
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.2
5
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ
.
0.102 typ
.
Diam. I
3.7
5
3.85
0.147
0.151
A
C
D
L7
Ø I
L5
L6
L9
L4
F
H2
G
L2
F1
E
M
P1-P3
P4-P6
P7-P9
P10-P11
STTH1210DI
Mfr. #:
Buy STTH1210DI
Manufacturer:
STMicroelectronics
Description:
Rectifiers Ultrafast recovery high voltage diode
Lifecycle:
New from this manufacturer.
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