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HUF75321D3

P1-P3P4-P6P7-P9P10-P10
©2001 Fairchild Semiconductor Corporation HUF75321D3, HUF75321D3S Rev. B
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS FIGURE 8. TRANSFER CHARACTERISTICS
Typical Performance Curves
(Continued)
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
100
500
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
I
DM
, PEAK CURRENT (A)
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 20V
10
100
300
10 100
1
120
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
J
= MAX RATED
T
C
= 25
o
C
100
µ
s
10ms
1ms
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
V
DSS(MAX)
= 55V
0.10.01
10
I
AS
, AVALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R ≠ 0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
1
300
1
10
100
03.04.57.
5
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 5V
0
15
30
75
6.01.5
60
45
V
GS
= 6V
V
GS
= 10V
V
GS
= 20V
V
GS
= 8V
V
GS
= 7V
T
C
= 25
o
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
03.04.56.07.
5
1.5
0
15
30
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
25
o
C
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
75
45
60
-55
o
C
175
o
C
HUF75321D3, HUF75321D3S
©2001 Fairchild Semiconductor Corporation HUF75321D3, HUF75321D3S Rev. B
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
1.0
1.5
2.0
2.5
-40 0 40 80 120 160 200
0.5
-80
NORMALIZED DRAIN TO SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESISTANCE
V
GS
= 10V, I
D
= 20A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.8
1.0
1.2
-40 0 40 80 120 160 200
0.6
-80
NORMALIZED GATE
T
J
, JUNCTION TEMPERATURE (
o
C)
THRESHOLD VOLTAGE
V
GS
= V
DS
, I
D
= 250µA
0.9
1.0
1.1
1.2
-40 0 40 80 120 160 200-80
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN TO SOURCE
I
D
= 250µA
BREAKDOWN VOLTAGE
800
400
0
0 1020304050
C, CAPACITANCE (pF)
600
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
200
C
ISS
C
OSS
C
RSS
60
1000
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈ C
DS
+ C
GD
10
8
6
4
0
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DD
= 30V
2
15 200
Q
g
, GATE CHARGE (nC)
510
I
D
= 20A
I
D
= 10A
I
D
= 5A
WAVEFORMS IN
DESCENDING ORDER:
25
HUF75321D3, HUF75321D3S
©2001 Fairchild Semiconductor Corporation HUF75321D3, HUF75321D3S Rev. B
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORM
FIGURE 18. SWITCHING TIME TEST CIRCUIT FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
t
P
V
GS
0.01Ω
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
G(REF)
V
DD
Q
g(TH)
V
GS
= 2V
Q
g(10)
V
GS
= 10V
Q
g(TOT)
V
GS
= 20
V
V
DS
V
GS
I
g(REF)
0
0
Q
gs
Q
gd
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
HUF75321D3, HUF75321D3S
P1-P3P4-P6P7-P9P10-P10

HUF75321D3

Mfr. #:
Buy HUF75321D3
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 20a 55V N-Channel UltraFET
Lifecycle:
New from this manufacturer.
Delivery:
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