APT20M22LVRG Datasheet APT20M22LVRG | P1-P3

050-5544 Rev B

MAXIMUM RATINGS All Ratings: T

C

= 25°C unless otherwise specified.

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

UNIT

Volts

Amps

Ohms

µA

nA

Volts

MIN TYP MAX

200

100

0.022

25

250

±100

24

APT20M22LVR

200

100

400

±30

±40

520

4.16

-55 to 150

300

100

50

2500

APT20M22LVR

200V 100A 0.022Ω

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250µA)

On State Drain Current

2 5

(V

DS

> I

D(on)

x R

DS(on)

Max, V

GS

= 10V)

Drain-Source On-State Resistance

2

(V

GS

= 10V, 0.5 I

D[Cont.]

)

Zero Gate Voltage Drain Current (V

DS

= V

DSS

, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 0.8 V

DSS

, V

GS

= 0V, T

C

= 125°C)

Gate-Source Leakage Current (V

GS

= ±30V, V

DS

= 0V)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 2.5mA)

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

J

,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

C

= 25°C

Pulsed Drain Current

1 5

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

C

= 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

1 5

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

1

Single Pulse Avalanche Energy

4

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

5

G

D

S

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61

APT Website - http://www.advancedpower.com

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DYNAMIC CHARACTERISTICS

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 0.5 V

DSS

I

D

= I

D[Cont.]

@ 25°C

V

GS

= 15V

V

DD

= 0.5 V

DSS

I

D

= I

D[Cont.]

@ 25°C

R

G

= 0.6Ω

MIN TYP MAX

8500 10200

1950 2730

560 840

290 435

66 100

120 180

16 32

25 50

48 72

510

UNIT

pF

nC

ns

APT20M22LVR

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

3

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

050-5544 Rev B

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

UNIT

Amps

Volts

ns

µC

MIN TYP MAX

100

400

1.3

330

5.8

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θJA

MIN TYP MAX

0.24

40

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

Z

θ

JC

, THERMAL IMPEDANCE (°C/W)

10

-5

10

-4

10

-3

10

-2

10

-1

1.0 10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.3

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D =

t

1

/

t

2

Peak T

J

= P

DM

x Z

θJC

+ T

C

t

1

t

2

P

DM

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

1

Repetitive Rating: Pulse width limited by maximum T

j

4

Starting T

j

=

+25°C, L = 500µH, R

G

=

25Ω, Peak I

L

= 100A

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

5

The maximum current is limited by lead temperature.

3

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current

1 5

(Body Diode)

Diode Forward Voltage

2

(V

GS

= 0V, I

S

= -I

D[Cont.]

)

Reverse Recovery Time (I

S

= -I

D[Cont.]

, dl

S

/dt = 100A/µs)

Reverse Recovery Charge (I

S

= -I

D[Cont.]

, dl

S

/dt = 100A/µs)

5

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

V

GS

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

D

, DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R

DS

(ON) vs DRAIN CURRENT

T

C

, CASE TEMPERATURE (°C) T

J

, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

T

J

, JUNCTION TEMPERATURE (°C) T

C

, CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

R

DS

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (AMPERES) I

D

, DRAIN CURRENT (AMPERES) I

D

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

V

GS

(TH), THRESHOLD VOLTAGE BV

DSS

, DRAIN-TO-SOURCE BREAKDOWN R

DS

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (AMPERES)

(NORMALIZED) VOLTAGE (NORMALIZED)

020406080100 0 1 2 3 4 5

02468 050100150200250300

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

APT20M22LVR

I

D

= 0.5 I

D

[Cont.]

V

GS

= 10V

200

160

120

80

40

0

1.4

1.3

1.2

1.1

1.0

0.9

0.8

1.15

1.10

1.05

1.00

0.95

0.90

1.2

1.1

1.0

0.9

0.8

0.7

0.6

200

160

120

80

40

0

200

160

120

80

40

0

100

80

60

40

20

0

2.5

2.0

1.5

1.0

0.5

0.0

050-5544 Rev B

V

DS

> I

D

(ON) x R

DS

(ON)MAX.

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

V

GS

=7V, 8V, 10V & 15V

6V

V

GS

=15V

V

GS

=10V

V

GS

=20V

T

J

= +25°C

T

J

= -55°C

T

J

= +125°C

T

J

= +125°C

T

J

= +25°C T

J

= -55°C

8V

10V

7V

6.5V

5.5V

4.5V

5V

4V

6V

6.5V

5.5V

4.5V

5V

4V

NORMALIZED TO

V

GS

= 10V @ 0.5 I

D

[Cont.]

APT20M22LVRG

APT20M22LVRG

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