FDB8444_F085 N-Channel PowerTrench
®
MOSFET
FDB8444_F085 Rev C (W)
www.fairchildsemi.com2
Electrical Characteristics T
J
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage I
D
= 250μA, V
GS
= 0V 40 - - V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 32V
V
GS
= 0V
- - 1 μA
T
J
=150°C - - 250 μA
I
GSS
Gate to Source Leakage Current V
GS
= ±20V - - ±100 nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage V
DS
= V
GS
, I
D
= 250μA 2 2.6 4 V
r
on)
Drain to Source On Resistance
I
D
= 70A, V
GS
= 10V - 3.9 5.5
mΩ
I
D
= 70A, V
GS
= 10V,
T
J
= 175°C
- 7 9.9
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
- 6040 8035 pF
C
oss
Output Capacitance - 480 640 pF
C
rss
Reverse Transfer Capacitance - 290 435 pF
R
G
Gate Resistance f = 1MHz - 2 - Ω
Q
g(TOT)
Total Gate Charge at 10V V
GS
= 0 to 10V
V
DD
= 20V,
I
D
= 70A,
- 91 128 nC
Q
g(TH)
Threshold Gate Charge V
GS
= 0 to 2V - 7 10 nC
Q
gs
Gate to Source Gate Charge
- 23 - nC
Q
gs2
Gate Charge Threshold to Plateau - 17 - nC
Q
gd
Gate to Drain “Miller” Charge - 20 - nC
DS(
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage 40 V
V
GS
Gate to Source Voltage ± 20 V
I
D
Drain Current Continuous (V
GS
= 10V) (Note 1) 70 A
Pulsed Figure 4
E
AS
Single Pulse Avalanche Energy (Note 2) 307 mJ
P
D
Power Dissipation 167 W
Derate above 25
o
C1.1W/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to +175
o
C
R
θJC
Maximum Thermal Resistance, Junction to Case 0.9
o
C/W
R
θJA
Maximum Thermal Resistance, Junction to Ambient TO-263, lin
2
cop-
per pad area
43
o
C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDB8444 FDB8444_F085 TO-263AB 330mm 24mm 800 units
