TSC4505
High Voltage NPN Transistor
Document Number:
DS_P0000248 1
Version: C15
PRODUCT SUMMARY
BV
400V
BV
400V
I
300mA
V
0.1V @ I
C
/ I
B
= 10mA / 1mA
Features
● Low V
CE(SAT)
0.15V @ I
C
/ I
B
= 10mA / 10mA (Typ.)
● Complementary part with TSA1759
Ordering Information
Part No. Package Packing
TSC4505CX RFG SOT-23 3Kpcs / 7” Reel
Note: “G” denotes Halogen Free Product.
Structure
● Epitaxial Planar Type
● NPN Silicon Transistor
Absolute Maximum Rating
(T
A
= 25°C unless otherwise noted)
Parameter Symbol Limit Unit
Collector-Base Voltage V
400 V
Collector-Emitter Voltage V
400 V
Emitter-Base Voltage V
6 V
Collector Current I
300 mA
Collector Power Dissipation SOT-23
P
D
0.225 W
Operating Junction Temperature T
+150 °C
Operating Junction and Storage Temperature Range T
- 55 to +150 °C
Note: Single pulse, Pw=20ms, Duty≤50%
Electrical Specifications
(T
A
= 25°C unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max
Unit
Collector-Base Breakdown Voltage I
C
= 50uA, I
E
= 0 BV
CBO
400 -- -- V
Collector-Emitter Breakdown Voltage
I
C
= 1mA, I
B
= 0 BV
CEO
400 -- -- V
Emitter-Base Breakdown Voltage I
E
= 50uA, I
C
= 0 BV
EBO
6 -- -- V
Collector Cutoff Current V
CB
= 400V, I
E
= 0 I
CBO
-- -- 10 uA
Collector-Emitter Reverse Current V
CE
= 300V, R
EB
= 4kΩ I
CER
-- -- 20 nA
Emitter Cutoff Current V
EB
= 6V, I
C
= 0 I
EBO
-- -- 10 uA
Collector-Emitter Saturation Voltage I
C
/ I
B
= 10mA / 1mA V
CE(SAT)
-- 0.1 0.5 V
Base-Emitter Saturation Voltage I
C
/ I
B
= 10mA / 1mA V
BE(SAT)
-- -- 1.5 V
DC Current Transfer Ratio V
CE
= 10V, I
C
= 10mA h
FE
100 -- 270
Transition Frequency
V
CE
=10V, I
C
=-10mA,
f=10MHz
f
T
-- 20 -- MHz
Output Capacitance V
CB
= 10V, I
E
= 0, f=1MHz
Cob -- 7 -- pF
1. Base
2. Emitter
3. Collector
