Electrical characteristics TS9511
4/11 DocID15707 Rev 6
2 Electrical characteristics
Table 3. Electrical characteristics at V
CC
= +3 V, V
DD
= 0 V , V
icm
= V
CC
/2,
R
L
connected to V
CC
/2, T
amb
= 25 °C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
V
io
Input offset voltage
T
min
≤ T
amb
≤ T
max
800
1500
µV
ΔV
io
/ΔT Input offset voltage drift 2 µV/°C
I
io
Input offset current
T
min
≤ T
amb
≤ T
max
130
80
nA
I
ib
Input bias current
T
min
≤ T
amb
≤ T
max
30 70
150
CMR
Common mode rejection ratio
T
min
≤ T
amb
≤ T
max
60
55
90
dB
SVR
Supply voltage rejection ratio, V
CC
= 2.7 to 3.3 V
T
min
≤ T
amb
≤ T
max
65
60
90
A
vd
Large signal voltage gain, V
o
= 2 V
pk-pk
, R
L
= 600 Ω
T
min
≤ T
amb
≤ T
max
70
65
80
V
OH
High level output voltage, R
L
= 600 Ω
T
min
≤ T
amb
≤ T
max
2.8
2.8
2.9
V
V
OL
Low level output voltage, R
L
= 600 Ω
T
min
≤ T
amb
≤ T
max
80 250
250
mV
I
sc
Output short-circuit current 10 20
mA
I
CC
Supply current (per amplifier), no load, V
icm
= V
CC
/2
T
min
≤ T
amb
≤ T
max
0.8 1
1.2
GBP
Gain bandwidth product
R
L
= 10 kΩ, C
L
= 100 pF
3MHz
SR
Slew rate
R
L
= 10 kΩ, C
L
= 100 pF
1V/µs
∅m
Phase margin at unit gain
R
L
= 10k Ω, C
L
= 100 pF
58 Degrees
Gm
Gain margin
R
L
= 10k Ω, C
L
= 100 pF
12 dB
e
n
Equivalent input noise voltage
f = 1 kHz
25
THD
Total harmonic distortion
V
out
= 4 V
pk-pk
, F = 10 kHz, A
V
= 2, R
L
=10 kΩ
0.01 %
