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NTMD4820NR2G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 2
1 Publication Order Number:
NTMD4820N/D
NTMD4820N
Power MOSFET
30 V, 8 A, Dual N−Channel, SOIC−8
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Dual SOIC−8 Surface Mount Package Saves Board Space
Applications
• Disk Drives
• DC−DC Converters
• Printers
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
6.4
A
T
A
= 70°C 5.1
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
1.28 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
4.9
A
T
A
= 70°C 3.9
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
0.75 W
Continuous Drain
Current R
q
JA
t < 10 s
(Note 1)
T
A
= 25°C
I
D
8.0
A
T
A
= 70°C 6.4
Power Dissipation
R
q
JA
t < 10 s (Note 1)
T
A
= 25°C P
D
2.0 W
Pulsed Drain Current T
A
= 25°C,
t
p
= 10 ms
I
DM
32 A
Operating Junction and Storage Temperature T
J
, T
STG
−55 to
+150
°C
Source Current (Body Diode) I
S
2.0 A
Single Pulse Drain−to−Source Avalanche
Energy T
J
= 25C, V
DD
= 30 V, V
GS
= 10 V,
I
L
= 11 A
pk
, L = 1.0 mH, R
G
= 25 W
EAS 60.5 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Rating Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
97.5
°C/W
Junction−to−Ambient – t ≤ 10 s (Note 1)
R
q
JA
62
Junction−to−FOOT (Drain)
R
q
JF
40
Junction−to−Ambient – Steady State (Note 2)
R
q
JA
167.5
1. Surface−mounted on FR4 board using 1 inch sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
N−Channel
30 V
27 mW @ 4.5 V
20 mW @ 10 V
R
DS(on)
Max
I
D
Max
V
(BR)DSS
8 A
Device Package Shipping
†
ORDERING INFORMATION
NTMD4820NR2G SOIC−8
(Pb−Free)
2500/Tape & Reel
SOIC−8
CASE 751
STYLE 11
4820N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
8
4820N
AYWW
G
1
8
MARKING DIAGRAM
& PIN ASSIGNMENT
S1 G1 S2 G2
D1 D1 D2 D2
D
G
S
NTMD4820N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)jk
Characteristic
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain−to−Source Breakdown Voltage Tem-
perature Coefficient
V
(BR)DSS
/T
J
26
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
1.0
mA
T
J
= 100°C
10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.5 3.0 V
Negative Threshold Temperature Coeffi-
cient
V
GS(TH)
/T
J
5.0
mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V I
D
= 7.5 A
15 20
mW
V
GS
= 4.5 V I
D
= 6.5 A
20 27
Forward Transconductance g
FS
V
DS
= 1.5 V, I
D
= 7.5 A 21 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 15 V
940
pF
Output Capacitance C
OSS
225
Reverse Transfer Capacitance C
RSS
125
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 7.5 A
7.7
nC
Threshold Gate Charge Q
G(TH)
1.1
Gate−to−Source Charge Q
GS
3.3
Gate−to−Drain Charge Q
GD
3.2
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V, I
D
= 7.5 A 15.2 nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= 10 V, V
DD
= 15 V,
I
D
= 1.0 A, R
G
= 6.0 W
9.4
ns
Rise Time t
r
4.0
Turn−Off Delay Time t
d(OFF)
21
Fall Time t
f
6.5
DRAIN−TO−SOURCE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V
I
D
= 2.0 A
T
J
= 25°C
0.75 1.0
V
T
J
= 125°C
0.59
ns
Reverse Recovery Time t
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
= 2.0 A
17.8
Charge Time T
a
8.3
Discharge Time T
b
9.5
Reverse Recovery Time Q
RR
8.0
nC
PACKAGE PARASITIC VALUES
Source Inductance
L
S
T
A
= 25°C
0.66 nH
Drain Inductance L
D
0.20 nH
Gate Inductance L
G
1.50 nH
Gate Resistance R
G
1.5 3.0
W
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTMD4820N
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
T
J
= 125°C
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
I
D,
DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
T
J
= −55°C
T
J
= 25°C
I
D
= 7.5 A
V
GS
= 10 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
T
J
= 25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
= 10 V
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 150°C
T
J
= 100°C
V
GS
= 4.5 V
V
DS
≥ 10 V
3.2 V
3.0 V
I
D,
DRAIN CURRENT (AMPS)
5 V
4.5 V
4 V
3.6 V
0
2.5
5
7.5
10
0 0.5 1.0 1.5 2.0 2.5 3.0
0
5
10
15
1234
0
0.005
0.010
0.015
0.020
0.025
0.030
2 6 10 14
0.6
0.8
1.0
1.2
1.4
1.6
−50 −25 0 25 50 75 100 125 150
100
1000
10000
100000
3 6 9 12151821242730
3.4 V
2.8 V
10V
6 V
4.2 V
3.8 V
0.7
0.9
1.1
1.3
1.5
12.5
15
3.5 4.0
1.5 2.5 3.5 4.5
4812
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
T
J
= 25°C
I
D
= 7.5 A
0.005
0.015
0.025
0.035
0.045
0.055
0.065
0.075
0.095
34 6 8 10
0.085
579
P1-P3P4-P5

NTMD4820NR2G

Mfr. #:
Buy NTMD4820NR2G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET SO8 30V 8A TR 0.020R
Lifecycle:
New from this manufacturer.
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