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FMMTL717TC
P1-P3
P4-P6
P7-P7
A
Product Line of
Diodes I
ncorporated
FMMTL717
Electri
cal Ch
aracte
rist
ics
(@
T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
T
yp
Max
Unit
Test C
ondition
Collect
or
-
Base Breakdown Volt
age
BV
CBO
-
12
-35
-
V
I
C
=
-
100µA
Collect
or
-E
mitte
r Breakdown Voltage (Note
9)
BV
CEO
-
12
-25
-
V
I
C
=
-
10m
A
Emitte
r
-
Base Breakdown
Volt
age
BV
EBO
-7
-
8.5
-
V
I
E
=
-
100µA
Collect
or Cutoff Current
I
CBO
-
<-1
-
10
nA
V
CB
=
-
10
V
Emitter Cutoff Current
I
EBO
-
<-1
-
10
nA
V
EB
=
-
5.6
V
Collect
or E
mitter Cutoff Current
I
CES
-
<-1
-
10
nA
V
CE
=
-
10
V
Static Forward Current Transf
er Ratio
(Note
9)
h
FE
300
490
-
-
I
C
=
-
10m
A,
V
CE
=
-
2V
300
450
-
I
C
=
-
0.
1
A, V
CE
=
-
2V
180
2
75
-
I
C
=
-1
A, V
CE
=
-
2V
100
180
-
I
C
=
-2
A, V
CE
=
-
2V
50
110
-
I
C
=
-3
A, V
CE
=
-
2V
Collect
or
-
Emitter Saturation V
oltage
(Note 9
)
V
CE(sat
)
-
-24
-
40
mV
I
C
=-
0.1A
, I
B
=
-
10m
A
-
-
94
-
140
mV
I
C
=-
0.
5
A,
I
B
=
-
20m
A
-
-160
-240
mV
I
C
=
-
1A,
I
B
=
-5
0m
A
-
-2
00
-
29
0
mV
I
C
=
-
1.
2
5A, I
B
=
-5
0m
A
Base
-
Emitt
er Turn
-
On Voltage
(Note 9
)
V
BE(on)
-
-
875
-10
00
mV
I
C
=
-
1.
25
A, V
CE
=
-
2V
Base
-
Emitter S
aturation
Voltage(Not
e
9)
V
BE(sat)
-
-
970
-1
10
0
mV
I
C
=
-
1.
25
A, I
B
=
-50
mA
Output Capacit
ance
C
obo
-
15
20
pF
V
CB
=
-
10V
,
f = 1
MHz
Transit
ion Frequency
f
T
-
205
-
MHz
V
CE
=
-
10V, I
C
=
-
50m
A,
f = 100MHz
Turn
-
On T
ime
t
on
-
76
-
ns
V
CC
= -10
V, I
C
= -1A
I
B1
=
-I
B2
=
-
10
mA
Turn
-
Off Time
t
off
-
149
-
ns
Note
s:
9.
Measured u
nder
pulsed c
onditio
ns. Pulse
width
≤
3
00
µs. Dut
y cycle ≤ 2%
FMMTL717
Docume
nt Num
ber: DS
33131
Rev
. 2
- 2
4
of
7
www.diodes.com
July 2014
© Diodes Inco
rporated
A
Product Line of
Diodes I
ncorporated
FMMTL717
Typical Electric
a
l
Ch
aracter
istic
s
(@
T
A
= +25°C, unless otherwise specified.)
FMMTL717
Docume
nt Num
ber: DS
33131
Rev
. 2
- 2
5
of
7
www.diodes.com
July 2014
© Diodes Inco
rporated
A
Product Line of
Diodes I
ncorporated
FMMTL717
Package Ou
tline Dim
ensions
Please see AP02002 at http://www.diodes.c
om/datasheets/ap02002.pdf for lat
est version.
Suggested Pad La
y
out
Please see AP02001 at http://www.diodes.c
om/datasheets/ap02001.pdf for the latest
versi
on.
SOT2
3
Dim
Min
Max
T
yp
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.
00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.
25
0.55
0.40
M
0.085
0.150
0.11
0
a
8°
A
ll Dimensions
in mm
Dimensions
Value
(in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
Y
C
Z
J
K1
K
L1
H
L
M
All 7°
A
C
B
D
a
FMMTL717
Docume
nt Num
ber: DS
33131
Rev
. 2
- 2
6
of
7
www.diodes.com
July 2014
© Diodes Inco
rporated
P1-P3
P4-P6
P7-P7
FMMTL717TC
Mfr. #:
Buy FMMTL717TC
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP Low Saturation
Lifecycle:
New from this manufacturer.
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