SPEC NO: DSAM8420 REV NO: V.2A DATE: MAR/28/2015 PAGE: 2 OF 7
APPROVED: WYNEC CHECKED: Joe Lee DRAWN: L.Q.Xie ERP: 1301001636
Selection Guide
Absolute Maximum Ratings at TA=25°C
Electrical / Optical Characteristics at TA=25°C
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
Part No. Dice Lens Type
Iv (ucd) [1]
@ 10mA
Description
Min. Typ.
SA40-18SURKWA Hyper Red (AlGaInP) White Diffused
88000 250000
*31000 *74000
Common Anode, Rt.
Hand Decimal.
Symbol Parameter Device Typ. Max. Units Test Conditions
λpeak Peak Wavelength Hyper Red 645 nm I
F=20mA
λD [1] Dominant Wavelength Hyper Red 630 nm I
F=20mA
Δλ1/2 Spectral Line Half-width Hyper Red 28 nm I
F=20mA
C Capacitance Hyper Red 35 pF V
F=0V;f=1MHz
V
F [2]
Forward Voltage
(DP)
Hyper Red
7.8
(3.9)
10.0
(5.0)
V I
F=20mA
I
R
Reverse Current
(Per Chip)
Hyper Red 10 uA V
R=5V
Parameter Hyper Red Units
Power dissipation
(Per Chip)
75 mW
DC Forward Current
(DP)
60
(30)
mA
Peak Forward Current [1]
(DP)
370
(185)
mA
Reverse Voltage
(Per Chip)
5 V
Operating / Storage Temperature -40°C To +85°C
Lead Solder Temperature[2] 260°C For 3-5 Seconds
Notes:
1. Luminous intensity/ luminous Flux: +/-15%.
* Luminous intensity value is traceable to the CIE127-2007 compliant national standards.
Notes:
1.Wavelength: +/-1nm.
2.Forward Voltage: +/-0.1V.
3.Wavelength value is traceable to the CIE127-2007 compliant national standards.
4.Excess driving current and/or operating temperature higher than recommended conditions may result in severe light degradation or
premature failure.
