SPB18P06PGATMA1

SPB18P06P G
SIPMOS
®
Power-Transistor
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• 175°C operating temperature
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
A
=25 °C
A
T
A
=100 °C
Pulsed drain current
I
D,pulse
T
A
=25 °C
Avalanche energy, single pulse
E
AS
I
D
=18.7 A, R
GS
=25
mJ
Avalanche energy, periodic limited by
T
jmax
E
AR
8
Reverse diode dv /dt dv /dt
I
D
=18.7 A, V
DS
=48 V,
di /dt =-200 A/µs,
T
j,max
=175 °C
kV/µs
Gate source voltage
V
GS
V
Power dissipation
P
tot
T
A
=25 °C
W
Operating and storage temperature
T
j
, T
stg
°C
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
55/175/56
"-55 ... +175"
±20
-6
260 °C
-18.7
-13.2
81.1
Value
151
-74.8
steady state
V
DS
-60 V
R
DS(on),max
0.13
I
D
-18.6 A
Product Summary
Type Package Tape and reel information Marking Lead free Packing
SPB18P06PG PG-TO263-3 Yes
PG-TO263-3
Rev 1.
6 page 1 2012-09-07
1000 pcs / reel 18P06P
° Halogen-free according to IEC61249-2-21
° Qualified according to AEC Q101
• Pb-free lead plating; RoHS compliant
Non dry
SPB18P06P G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - case
R
thJC
- - 1.85 K/W
Thermal resistance,
junction - ambient,leaded
R
thJA
--62
SMD verson, device on PCB:
R
thJA
minimal footprint - - 62 K/W
6 cm
2
cooling area
1)
--40
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=-250 µA
-60 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=-
1000 µA
-2.1 3 -4
Zero gate voltage drain current
I
DSS
V
DS
=-60 V, V
GS
=0 V,
T
j
=25 °C
- -0.1 -1 µA
V
DS
=-60 V, V
GS
=0 V,
T
j
=150 °C
- -10 -100
Gate-source leakage current
I
GSS
V
GS
=-20 V, V
DS
=0 V
- -10 -100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=-10 V, I
D
=-13.2 A
- 101 130
m
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=-13.2 A
510-S
1)
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70 µm thick) copper area for drain connection.
FCB is vertical without blown air
.
Values
Rev 1.6 page 2 2012-09-07
SPB18P06P G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
C
iss
- 690 860 pF
Output capacitance
C
oss
- 230 290
Reverse transfer capacitance
C
rss
- 95 120
Turn-on delay time
t
d(on)
-1218ns
Rise time
t
r
- 5.8 8.7
Turn-off delay time
t
d(off)
-253737
Fall time
t
f
- 11 16.5
Gate Charge Characteristics
Gate to source charge
Q
gs
- -4.1 -5.5 nC
Gate to drain charge
Q
gd
- -11 -17
Gate charge total
Q
g
- -21 -28
Gate plateau voltage
V
plateau
- -5.94 - V
Reverse Diode
Diode continuous forward current
I
S
- - -18.6 A
Diode pulse current
I
S,pulse
- - -74.8
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=18.6 A,
T
j
=25 °C
- -0.99 -1.33 V
Reverse recovery time
t
rr
- 70 105 ns
Reverse recovery charge
Q
rr
- 139 208 nC
T
A
=25 °C
Values
V
GS
=0 V, V
DS
=-25 V,
f =1 MHz
V
DD
=-30 V, V
GS
=-
10 V, I
D
=-13.2 A,
R
G
=2.7
V
DD
=-48 V, I
D
=-
18.6 A, V
GS
=0 to -10 V
V
R
=30 V, I
F
=|I
S
|,
di
F
/dt =100 A/µs
Rev 1.6 page 3 2012-09-07

SPB18P06PGATMA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch -60V 18.6A D2PAK-2
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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