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BTA420X-800CT/L02Q

P1-P3P4-P6P7-P9P10-P12P13-P15
NXP Semiconductors
BTA420X-800CT
3Q Hi-Com Triac
BTA420X-800CT All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 5 June 2014 6 / 14
003aak706
10
-5
10
-1
10
-2
10
-4
10
-3
10
3
10
2
10
4
10
(A)
t
p
(s)
I
TSM
t
I
T
T
j(init)
= 25 °C max
t
p
(1)
I
TSM
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values
NXP Semiconductors
BTA420X-800CT
3Q Hi-Com Triac
BTA420X-800CT All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 5 June 2014 7 / 14
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
full cycle or half cycle; with heatsink
compound; Fig. 6
- - 4 K/WR
th(j-h)
thermal resistance
from junction to
heatsink
full cycle or half cycle; without heatsink
compound; Fig. 6
- - 5.5 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air - 55 - K/W
003aak707
10
-1
10
-2
1
10
Z
th(j-h)
(K/W)
10
-3
t
p
(s)
10
-5
1 1010
-1
10
-2
10
-4
10
-3
(1)
(2)
(3)
(4)
t
p
P
t
(1) Unidirectional (half cycle) without heatsink compound
(2) Unidirectional (half cycle) with heatsink compound
(3) Bidirectional (full cycle) without heatsink compound
(4) Bidirectional (full cycle) with heatsink compound
Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration
10. Isolation characteristics
Table 7. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
isol(RMS)
RMS isolation voltage from all terminals to external heatsink;
sinusoidal waveform; clean and dust
free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
T
h
= 25 °C
- - 2500 V
C
isol
isolation capacitance from main terminal 2 to external
heatsink; f = 1 MHz; T
h
= 25 °C
- 10 - pF
NXP Semiconductors
BTA420X-800CT
3Q Hi-Com Triac
BTA420X-800CT All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 5 June 2014 8 / 14
11. Characteristics
Table 8. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
- - 35 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
- - 35 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
- - 35 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 8
- - 50 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 8
- - 80 mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 8
- - 50 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - - 40 mA
V
T
on-state voltage I
T
= 24 A; T
j
= 25 °C; Fig. 10 - 1.2 1.5 V
V
D
= 12 V; T
j
= 25 °C; Fig. 11 - 0.7 1 VV
GT
gate trigger voltage
V
D
= 400 V; T
j
= 150 °C; Fig. 11 0.2 0.4 - V
I
D
off-state current V
D
= 800 V; T
j
= 150 °C - 0.2 1 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
1250 - - V/µs
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 20 A;
dV
com
/dt = 10 V/µs; gate open circuit
16 - - A/msdI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 20 A;
dV
com
/dt = 1 V/µs; gate open circuit
38 - - A/ms
P1-P3P4-P6P7-P9P10-P12P13-P15

BTA420X-800CT/L02Q

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Manufacturer:
WeEn Semiconductors
Description:
Triacs 3Q Hi-Com Triac
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