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4
Document Number 83032
Rev. 1.8, 12-Sep-07
Vishay Semiconductors
TLMG/H/O/P/Y310.
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature for InGaN
Figure 3. Pulse Forward Current vs. Pulse Duration
100806040
0
25
50
75
100
125
P- Power Dissipation (mW)
V
T
amb
- Ambient Temperature (°C)
95 10904
200
0
10
20
30
40
60
I
F
- Forward Current (mA)
95 10905
50
T
amb
- Ambient Temperature (°C)
100806040200
0.01 0.1 1 10
1
10
100
1000
10000
t
p
- Pulse Length (ms)
100
95 9985
I - Forward Current (mA)
F
DC
t
p
/T = 0.005
0.5
0.2
0.1
0.01
0.05
0.02
T
amb
< 60 °C
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
Figure 5. Forward Current vs. Forward Voltage
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
0.4 0.2 0 0.2 0.4
0.6
95 10319
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
I
V rel
- Relative Luminous Intensity
0.1
1
10
100
V
F
- Forward Voltage (V)
5 4 3 2
95 9989
I - Forward Current (mA)
F
red
1 0
0
0.4
0.8
1.2
1.6
2.0
100
95 9993
I - RelativeLuminous Intensity
v rel
T
amb
- Ambient Temperature (°C)
0 20406080
red
