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MMBT3416LT3G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 1998
June, 2018 − Rev. 4
1 Publication Order Number:
MMBT3416LT3/D
MMBT3416LT3G
General Purpose Amplifier
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
40 Vdc
Emitter−Base Voltage V
EBO
4.0 Vdc
Collector Current − Continuous I
C
100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina Substrate,
(Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
www.onsemi.com
SOT−23 (TO−236)
CASE 318
STYLE 6
1
2
3
1
GP MG
G
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBT3416LT3G SOT−23
(Pb−Free)
10,000/Tape & Ree
l
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
GP = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MMBT3416LT3G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
40 − Vdc
Emitter−Base Breakdown Voltage
(I
E
= 100 mAdc, I
C
= 0)
V
(BR)EBO
4.0 − Vdc
Collector Cutoff Current
(V
CB
= 25 Vdc, I
E
= 0)
I
CBO1
− 100 nAdc
Emitter Cutoff Current
(V
EB
= 5.0 Vdc, I
C
= 0)
I
EBO
− 100 nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 2.0 mAdc, V
CE
= 4.5 Vdc)
h
FE
75 225 −
Collector−Emitter Saturation Voltage
(I
C
= 50 mAdc, I
B
= 3.0 mAdc)
V
CE(sat)
− 0.3 Vdc
Base−Emitter Saturation Voltage
(I
C
= 50 mAdc, I
B
= 3.0 mAdc)
V
BE(sat)
0.6 1.3 Vdc
SMALL−SIGNAL CHARACTERISTICS
Collector Cutoff Current
(V
CB
= 18 Vdc, T
A
= 100°C)
I
CBO2
− 15
mAdc
Small−Signal Current Gain
(I
C
= 2.0 mAdc, V
CE
= 4.0 Vdc, f = 1 kHz)
h
FE
75 − −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Figure 1. Turn−On Time Figure 2. Turn−Off Time
EQUIVALENT SWITCHING TIME TEST CIRCUITS
*Total shunt capacitance of test jig and connectors
10 k
+3.0 V
275
C
S
< 4.0 pF*
10 k
+3.0 V
275
C
S
< 4.0 p
F
1N916
300 ns
DUTY CYCLE = 2%
+10.9 V
-0.5 V
<1.0 ns
10 < t
1
< 500 ms
DUTY CYCLE = 2%
+10.9 V
0
-9.1 V
< 1.0 ns
t
1
MMBT3416LT3G
www.onsemi.com
3
TYPICAL NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
Figure 3. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
20
3.0
Figure 4. Noise Current
f, FREQUENCY (Hz)
2.0
10 20 50 100 200 500 1k 2k 5k 10k
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
BANDWIDTH = 1.0 Hz
R
S
= 0
I
C
= 1.0 mA
100 mA
e
n
, NOISE VOLTAGE (nV)
I
n
, NOISE CURRENT (pA)
30 mA
BANDWIDTH = 1.0 Hz
R
S
≈∞
10 mA
300 mA
I
C
= 1.0 mA
300 mA
100 mA
30 mA
10 mA
10 20 50 100 200 500 1k 2k 5k 1
0
NOISE FIGURE CONTOURS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
Figure 5. Narrow Band, 100 Hz
I
C
, COLLECTOR CURRENT (mA)
500k
Figure 6. Narrow Band, 1.0 kHz
I
C
, COLLECTOR CURRENT (mA)
10
2.0 dB
BANDWIDTH = 1.0 Hz
R
S
, SOURCE RESISTANCE (OHMS)
R
S
, SOURCE RESISTANCE (OHMS)
Figure 7. Wideband
I
C
, COLLECTOR CURRENT (mA)
10
10 Hz to 15.7 kHz
R
S
, SOURCE RESISTANCE (OHMS)
Noise Figure is defined as:
NF + 20 log
10
ǒ
e
n
2
) 4KTR
S
) I
n
2
R
S
2
4KTR
S
Ǔ
1ń2
= Noise Voltage of the Transistor referred to the input. (Figur
e 3
= Noise Current of the Transistor referred to the input. (Figur
e 4
= Boltzman’s Constant (1.38 x 10
−23
j/°K)
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
e
n
I
n
K
T
R
S
3.0 dB
4.0 dB
6.0 dB
10 dB
50
100
200
500
1k
10k
5k
20k
50k
100k
200k
2k
20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1
500k
100
200
500
1k
10k
5k
20k
50k
100k
200k
2k
1M
500k
50
100
200
500
1k
10k
5k
20k
50k
100k
200k
2k
20 30 50 70 100 200 300 500 700 1k
BANDWIDTH = 1.0 Hz
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
P1-P3P4-P6P7-P7

MMBT3416LT3G

Mfr. #:
Buy MMBT3416LT3G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 40 V NPN Bipolar Transistor
Lifecycle:
New from this manufacturer.
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