BZT52C39-G3-08 Datasheet BZT52C10-G3-18, BZT52C36-G3-18, BZT52C18-G3-08 | P1-P3

BZT52-G-Series

www.vishay.com

Vishay Semiconductors

Rev. 1.3, 27-Feb-13

Document Number: 83340

For technical questions within your region: DiodesAmericas@vishay.com

, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Small Signal Zener Diodes

FEATURES

• Silicon planar power Zener diodes

• The Zener voltages are graded according to the

international E24 standard

• AEC-Q101 qualified

• ESD capability according to AEC-Q101:

Human body model > 8 kV

Machine model > 800 V

• Base P/N-G3 - green, commercial grade

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

PARAMETER VALUE UNIT

range nom. 2.4 to 75 V

Test current I

2.5; 5 mA

specification Pulse current

Int. construction Single

ORDERING INFORMATION

DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY

BZT52-G-series

BZT52C2V4-G3-08 to BZT52C75-G3-08

3000 (8 mm tape on 7" reel) 15 000/box

BZT52B2V4-G3-08 to BZT52B75-G3-08

BZT52C2V4-G3-18 to BZT52C75-G3-18

10 000 (8 mm tape on 13" reel) 10 000/box

BZT52B2V4-G3-18 to BZT52B75-G3-18

PACKAGE

PACKAGE NAME WEIGHT

MOLDING COMPOUND

FLAMMABILITY RATING

MOISTURE SENSITIVITY

LEVEL

SOLDERING CONDITIONS

SOD-123 9.4 mg UL 94 V-0

MSL level 1

(according J-STD-020)

260 °C/10 s at terminals

ABSOLUTE MAXIMUM RATINGS (T

amb

= 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Power dissipation

Diode on ceramic substrate 0.7 mm;

5 mm

pad areas

tot

500 mW

Diode on ceramic substrate 0.7 mm;

2.5 mm

pad areas

tot

410 mW

Zener current See Table “Electrical Characteristics”

Thermal resistance junction to ambient air

Valid provided that electrodes are kept at

ambient temperature

thJA

300 K/W

Junction temperature

150 °C

Storage temperature range

stg

- 65 to + 150 °C

Operating temperature range

- 55 to + 150 °C

BZT52-G-Series

www.vishay.com

Vishay Semiconductors

Rev. 1.3, 27-Feb-13

Document Number: 83340

For technical questions within your region: DiodesAmericas@vishay.com

, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

•I

ZT1

= 5 mA, I

ZT2

= 1 mA

(1)

Measured with pulses t

= 5 ms

(2)

ZT1

= 2.5 mA

(3)

ZT2

= 0.5 mA

(4)

Valid provided that electrodes are kept at ambient temperature

ELECTRICAL CHARACTERISTICS (T

amb

= 25 °C, unless otherwise specified)

PART NUMBER

MARKING

CODE

ZENER VOLTAGE

RANGE

(1)

TEST

CURRENT

REVERSE

VOLTAGE

DYNAMIC

RESISTANCE

TEMP.

COEFFICIENT

ADMISSABLE

ZENER

CURRENT

(4)

at I

ZT1

ZT2

at I

ZT1

at I

ZT2



amb

45 °C

amb

25 °C

V mA V nA  10

-4

/°C mA

MIN. NOM. MAX.

BZT52C2V4-G

Y1 2.2 2.4 2.6 5 1 - 100 85 600 - 9 to - 4 - -

BZT52C2V7-G

Y2 2.5 2.7 2.9 5 1 - 100 75 (< 83) < 500 - 9 to - 4 113 134

BZT52C3V0-G

Y3 2.8 3.0 3.2 5 1 - 100 80 (< 95) < 500 - 9 to - 3 98 118

BZT52C3V3-G

Y4 3.1 3.3 3.5 5 1 - 100 80 (< 95) < 500 - 8 to - 3 92 109

BZT52C3V6-G

Y5 3.4 3.6 3.8 5 1 - 100 80 (< 95) < 500 - 8 to - 3 85 100

BZT52C3V9-G

Y6 3.7 3.9 4.1 5 1 - 100 80 (< 95) < 500 - 7 to - 3 77 92

BZT52C4V3-G

Y7 4 4.3 4.6 5 1 - 100 80 (< 95) < 500 - 6 to - 1 71 84

BZT52C4V7-G

Y8 4.4 4.7 5 5 1 - 100 70 (< 78) < 500 - 5 to + 2 64 76

BZT52C5V1-G

Y9 4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480 - 3 to + 4 56 67

BZT52C5V6-G

YA 5.2 5.6 6 5 1 > 1 100 10 (< 40) < 400 - 2 to + 6 50 59

BZT52C6V2-G

YB 5.8 6.2 6.6 5 1 > 2 100 4.8 (< 10) < 200 - 1 to + 7 45 54

BZT52C6V8-G

YC 6.4 6.8 7.2 5 1 > 3 100 4.5 (< 8) < 150 + 2 to + 7 41 49

BZT52C7V5-G

YD 7 7.5 7.9 5 1 > 5 100 4 (< 7) < 50 + 3 to + 7 37 44

BZT52C8V2-G

YE 7.7 8.2 8.7 5 1 > 6 100 4.5 (< 7) < 50 + 4 to + 7 34 40

BZT52C9V1-G

YF 8.5 9.1 9.6 5 1 > 7 100 4.8 (< 10) < 50 + 5 to + 8 30 36

BZT52C10-G

YG 9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70 + 5 to + 8 28 33

BZT52C11-G

YH 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 + 5 to + 9 25 30

BZT52C12-G

YI 11.4 12 12.7 5 1 > 9 100 7 (< 20) < 90 + 6 to + 9 23 28

BZT52C13-G

YK 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 + 7 to + 9 21 25

BZT52C15-G

YL 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 + 7 to + 9 19 23

BZT52C16-G

YM 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 + 8 to + 9.5 17 20

BZT52C18-G

YN 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 + 8 to + 9.5 15 18

BZT52C20-G

YO 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 + 8 to + 10 14 17

BZT52C22-G

YP 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 + 8 to + 10 13 16

BZT52C24-G

YR 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 + 8 to + 10 11 13

BZT52C27-G

YS 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 + 8 to + 10 10 12

BZT52C30-G

YT 28 30 32 5 1 > 22.5 100 35 (< 80) < 250 + 8 to + 10 9 10

BZT52C33-G

YU 31 33 35 5 1 > 25 100 40 (< 80) < 250 + 8 to + 10 8 9

BZT52C36-G

YW 34 36 38 5 1 > 27 100 40 (< 90) < 250 + 8 to + 10 8 9

BZT52C39-G

YX 37 39 41 5 1 > 29 100 50 (< 90) < 300 + 10 to + 12 7 8

BZT52C43-G

YY 40 43 46 5 1 > 32 100 60 (< 100) < 700 + 10 to + 12 6 7

BZT52C47-G

YZ 44 47 50 5 1 > 35 100 70 (< 100) < 750 + 10 to + 12 5 6

BZT52C51-G

Z1 48 51 54 5 1 > 38 100 70 (< 100) < 750 + 10 to + 12 5 6

BZT52C56-G

Z2 52 56 60 2.5 1 - 100 < 135

(2)

< 1000

(3)

typ. + 10

(2)

BZT52C62-G

Z3 58 62 66 2.5 1 - 100 < 150

(2)

< 1000

(3)

typ. + 10

(2)

BZT52C68-G

Z4 64 68 72 2.5 1 - 100 < 200

(2)

< 1000

(3)

typ. + 10

(2)

BZT52C75-G

Z5 70 75 79 2.5 1 - 100 < 250

(2)

< 1000

(3)

typ. + 10

(2)

BZT52-G-Series

www.vishay.com

Vishay Semiconductors

Rev. 1.3, 27-Feb-13

Document Number: 83340

For technical questions within your region: DiodesAmericas@vishay.com

, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

•I

ZT1

= 5 mA, I

ZT2

= 1 mA

(1)

Measured with pulses t

= 5 ms

(2)

ZT1

= 2.5 mA

(3)

ZT2

= 0.5 mA

(4)

Valid provided that electrodes are kept at ambient temperature

ELECTRICAL CHARACTERISTICS (T

amb

= 25 °C, unless otherwise specified)

PART NUMBER

MARKING

CODE

ZENER VOLTAGE

RANGE

(1)

TEST

CURRENT

REVERSE

VOLTAGE

DYNAMIC

RESISTANCE

TEMP.

COEFFICIENT

ADMISSABLE

ZENER

CURRENT

(4)

at I

ZT1

ZT2

at I

ZT1

at I

ZT2



amb

45 °C

amb

25 °C

V mA V nA  10

-4

/°C mA

MIN. NOM. MAX.

BZT52B2V4-G

V1 2.35 2.4 2.45 5 1 - 100 85 600 - 9 to - 4 - -

BZT52B2V7-G

V2 2.65 2.7 2.75 5 1 - 100 75 (< 83) < 500 - 9 to - 4 113 134

BZT52B3V0-G

V3 2.94 3.0 3.06 5 1 - 100 80 (< 95) < 500 - 9 to - 3 98 118

BZT52B3V3-G

V4 3.23 3.3 3.37 5 1 - 100 80 (< 95) < 500 - 8 to - 3 92 109

BZT52B3V6-G

V5 3.53 3.6 3.67 5 1 - 100 80 (< 95) < 500 - 8 to - 3 85 100

BZT52B3V9-G

V6 3.82 3.9 3.98 5 1 - 100 80 (< 95) < 500 - 7 to - 3 77 92

BZT52B4V3-G

V7 4.21 4.3 4.39 5 1 - 100 80 (< 95) < 500 - 6 to - 1 71 84

BZT52B4V7-G

V8 4.61 4.7 4.79 5 1 - 100 70 (< 78) < 500 - 5 to + 2 64 76

BZT52B5V1-G

V9 5 5.1 5.2 5 1 > 0.8 100 30 (< 60) < 480 - 3 to + 4 56 67

BZT52B5V6-G

VA 5.49 5.6 5.71 5 1 > 1 100 10 (< 40) < 400 - 2 to + 6 50 59

BZT52B6V2-G

VB 6.08 6.2 6.32 5 1 > 2 100 4.8 (< 10) < 200 - 1 to + 7 45 54

BZT52B6V8-G

VC 6.66 6.8 6.94 5 1 > 3 100 4.5 (< 8) < 150 + 2 to + 7 41 49

BZT52B7V5-G

VD 7.35 7.5 7.65 5 1 > 5 100 4 (< 7) < 50 + 3 to + 7 37 44

BZT52B8V2-G

VE 8.04 8.2 8.36 5 1 > 6 100 4.5 (< 7) < 50 + 4 to + 7 34 40

BZT52B9V1-G

VF 8.92 9.1 9.28 5 1 > 7 100 4.8 (< 10) < 50 + 5 to + 8 30 36

BZT52B10-G

VG 9.8 10 10.2 5 1 > 7.5 100 5.2 (< 15) < 70 + 5 to + 8 28 33

BZT52B11-G

VH 10.8 11 11.2 5 1 > 8.5 100 6 (< 20) < 70 + 5 to + 9 25 30

BZT52B12-G

VI 11.8 12 12.2 5 1 > 9 100 7 (< 20) < 90 + 6 to + 9 23 28

BZT52B13-G

VK 12.7 13 13.3 5 1 > 10 100 9 (< 25) < 110 + 7 to + 9 21 25

BZT52B15-G

VL 14.7 15 15.3 5 1 > 11 100 11 (< 30) < 110 + 7 to + 9 19 23

BZT52B16-G

VM 15.7 16 16.3 5 1 > 12 100 13 (< 40) < 170 + 8 to + 9.5 17 20

BZT52B18-G

VN 17.6 18 18.4 5 1 > 14 100 18 (< 50) < 170 + 8 to + 9.5 15 18

BZT52B20-G

VO 19.6 20 20.4 5 1 > 15 100 20 (< 50) < 220 + 8 to + 10 14 17

BZT52B22-G

VP 21.6 22 22.4 5 1 > 17 100 25 (< 55) < 220 + 8 to + 10 13 16

BZT52B24-G

VR 23.5 24 24.5 5 1 > 18 100 28 (< 80) < 220 + 8 to + 10 11 13

BZT52B27-G

VS 26.5 27 27.5 5 1 > 20 100 30 (< 80) < 250 + 8 to + 10 10 12

BZT52B30-G

VT 29.4 30 30.6 5 1 > 22.5 100 35 (< 80) < 250 + 8 to + 10 9 10

BZT52B33-G

VU 32.3 33 33.7 5 1 > 25 100 40 (< 80) < 250 + 8 to + 10 8 9

BZT52B36-G

VW 35.3 36 36.7 5 1 > 27 100 40 (< 90) < 250 + 8 to + 10 8 9

BZT52B39-G

VX 38.2 39 39.8 5 1 > 29 100 50 (< 90) < 300 + 10 to + 12 7 8

BZT52B43-G

VY 42.1 43 43.9 5 1 > 32 100 60 (< 100) < 700 + 10 to + 12 6 7

BZT52B47-G

VZ 46.1 47 47.9 5 1 > 35 100 70 (< 100) < 750 + 10 to + 12 5 6

BZT52B51-G

U1 50 51 52 5 1 > 38 100 70 (< 100) < 750 + 10 to + 12 5 6

BZT52B56-G

U2 54.9 56 57.1 2.5 1 - 100 < 135

(2)

< 1000

(3)

typ. + 10

(2)

BZT52B62-G

U3 60.8 62 63.2 2.5 1 - 100 < 150

(2)

< 1000

(3)

typ. + 10 (

BZT52B68-G

U4 66.6 68 69.4 2.5 1 - 100 < 200

(2)

< 1000

(3)

typ. + 10

(2)

BZT52B75-G

U5 73.5 75 76.5 2.5 1 - 100 < 250

(2))

< 1500

(3)

typ. + 10

(2)

P1-P3 P4-P6 P7-P8

BZT52C39-G3-08

Mfr. #:

Buy BZT52C39-G3-08

Manufacturer:

Vishay Semiconductors

Description:

Zener Diodes 39 Volt 0.41W 5%

Lifecycle:

New from this manufacturer.

Delivery:

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BZT52C39-G3-08

BZT52C39-G3-08

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