MBR25HxxCT, MBRF25HxxCT, MBRB25HxxCT
www.vishay.com
Vishay General Semiconductor
Revision: 12-Jun-13
1
Document Number: 88789
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 15 A
V
RRM
35 V to 60 V
I
FSM
150 A
V
F
0.54 V, 0.60 V
I
R
100 μA
T
J
max. 175 °C
Package TO-220AB, ITO-220AB, TO-263AB
Diode variations Common cathode
TO-263AB
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR25HxxCT
ITO-220AB
MBRB25HxxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
MBRF25HxxCT
PIN 2
PIN 1
PIN 3
1
2
3
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR25H35CT MBR25H45CT MBR25H50CT MBR25H60CT UNIT
Maximum repetitive peak reverse voltage V
RRM
35 45 50 60
VWorking peak reverse voltage V
RWM
35 45 50 60
Maximum DC blocking voltage V
DC
35 45 50 60
Max. average forward
rectified current (fig. 1)
total device
I
F(AV)
30
A
per diode 15
Non-repetitive avalanche energy per diode
at 25 °C, I
AS
= 4 A, L = 10 mH
E
AS
80 mJ
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
I
FSM
150 A
Peak repetitive reverse surge current per diode
at t
p
= 2.0 μs, 1 kHz
I
RRM
1.0 0.5 A
Peak non-repetitive reverse energy
(8/20 μs waveform)
E
RSM
25 20 mJ
