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BSD314SPEH6327XTSA1
P1-P3
P4-P6
P7-P9
BSD314S
PE
OptiMOS™-P 3 Small-Signal-Tra
nsistor
Features
• P-channel
• Enhancement m
ode
• Logic level
(4.5V rated)
• ESD protected
• Qualified according AEC Q101
• 100% Lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings,
at
T
j
=25 °C, unless otherw
ise specified
Parameter
Symbol
Conditions
Unit
Continuous drain current
I
D
T
A
=25 °C
-1.5
A
T
A
=70 °C
-1.2
Pulsed drain current
I
D,pulse
T
A
=25 °C
-6.1
Avalanche energy
, single pulse
E
AS
I
D
=-1.5A,
R
GS
=25
W
6
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=-1.5 A,
V
DS
=-16V,
d
i
/d
t
=-200A/µs,
T
j,max
=150 °C
6
kV/µs
Gate source voltage
V
GS
±20
V
Power dissipati
on
1)
P
tot
T
A
=25 °C
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 150
°C
ESD Class
JESD22-A114 -HBM
1000V to 2000V
Soldering Temperature
260 °C
°C
IEC climatic category; DIN IE
C 68-1
55/150/56
°C
Value
0.5
PG
-SOT
-
363
3
1
2
V
DS
30
V
R
DS(on),max
V
GS
=-
10 V
140
m
W
V
GS
=-
4.5 V
230
I
D
-
1.5
A
Product Summary
Type
Package
Tape and Reel Information
Marking
Lead Free
Packing
BSD314SPE
PG
-SOT
-
363
H6327: 3000 pcs/ reel
XDs
Yes
Non dry
4
5
6
Rev 2.4
page 1
2013-04-15
BSD314S
PE
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics
Therm
al resistance,
junction - ambient
R
thJA
minim
al footprint
1)
-
-
250
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherw
ise spec
ified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
= 0V,
I
D
=-250µA
-30
-
-
V
Gate threshold voltag
e
V
GS(th)
V
DS
=V
GS
,
I
D
=-6.3µA
-1
-1.5
-2
Drain-source leakage current
I
DSS
V
DS
=-30V,
V
GS
=0 V,
T
j
=25 °C
-
-
-1
m
A
V
DS
=-30V,
V
GS
=0V,
T
j
=150 °C
-
-
-100
Gate-source leakage current
I
GSS
V
GS
=-20V,
V
DS
=0V
-
-
-5
μ
A
Drain-source on-state resistance
R
DS(on)
V
GS
=-4.5V,
I
D
=-1.2A
-
153
230
m
W
V
GS
=-10V,
I
D
=-1.5A
-
107
140
Transconductance
g
fs
|
V
DS
|>2|
I
D
|
R
DS(on)ma
x
,
I
D
=-1.2 A
3
-
S
Values
1)
Performed o
n 40mm
2
FR4 PCB. The traces a
re 1mm wide, 70
μ
m th
ick and
20mm lon
g; they are pres
ent on both
sides of
the PCB.
Rev 2.4
page 2
2013-04-15
BSD314S
PE
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
221
294
pF
Output capacitance
C
oss
-
126
168
Reverse transfer capacitance
C
rss
-
7
11
Turn-on delay
time
t
d(on)
-
5.1
-
ns
Rise time
t
r
-
3.9
-
Turn-of
f delay
tim
e
t
d(off)
-
12.4
-
Fall time
t
f
-
2.8
-
Gate Charge Characteristics
Gate to source charge
Q
gs
-
-0.7
-
nC
Gate to drain charge
Q
gd
-
-0.3
-
Gate charge total
Q
g
-
-2.9
-
Gate plateau vol
tage
V
plateau
-
-3.2
-
V
Reverse Diode
Diode continous forward current
I
S
-
-
-0.5
A
Diode pulse current
I
S,pulse
-
-
-6.1
Diode forward voltag
e
V
SD
V
GS
=0 V,
I
F
=-1.5A,
T
j
=25 °C
-
0.8
1.1
V
Reverse recovery
tim
e
t
rr
-
12.5
-
ns
Reverse recovery
c
harge
Q
rr
-
4.3
-
nC
V
R
=-15 V,
I
F
=-1.5A,
d
i
F
/d
t
=100 A/µs
T
A
=25 °C
Values
V
GS
=0 V,
V
DS
=-15 V,
f
=1 MHz
V
DD
=-15V,
V
GS
=-10 V,
I
D
=-1.5 A,
R
G,ext
=6
W
V
DD
=-15 V,
I
D
=-1.5 A,
V
GS
=0 to -10 V
Rev 2.4
page 3
2013-04-15
P1-P3
P4-P6
P7-P9
BSD314SPEH6327XTSA1
Mfr. #:
Buy BSD314SPEH6327XTSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch 30V -1.5A SOT-363-3
Lifecycle:
New from this manufacturer.
Delivery:
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