MSC1040.PDF 03-12-99
2N3740A
ABSOLUTE MAXIMUM RATINGS:ABSOLUTE MAXIMUM RATINGS:
SYMBOL CHARACTERISTIC VALUE UNITS
V
Collector-Emitter Voltage 60 Vdc
V
EB
*
Emitter-Base Voltage 7.0 Vdc
V
CB
*
Collector-Base Voltage 60 Vdc
I
C
*
Peak Collector Current 10 Adc
I
C
*
Continuous Collector Current 4.0 Adc
I
B
*
Base Current 2.0 Adc
T
Storage Temperature -65 to 200
°°C
T
J
*
Operating Junction Temperature -65 to 200
°°C
P
D
*
θθ
Total Device Dissipation
T
C
= 25°°C
Derate above 25°°C
25
0.143
7
Watts
W/°°C
°°
Medium Power
PNP Transistors
TO-66
• Drivers
• Switches
• Medium-Power Amplifiers
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200°°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
*
Indicates JEDEC registered data.
• Low Saturation Voltage: 0.6 V
CE(sat)
@ I
C
= 1.0 Amp
• High Gain Characteristics: hFE @ I
C
= 250 mA: 30-100
• Excellent Safe Area Limits
• Low Collector Cutoff Current: 100 nA (Max) 2N3740A