TYN810RG

®
1/6
Table 1: Main Features
DESCRIPTION
The TYNx10 Silicon Controlled Rectifiers is a high
performance glass passivated technology.
This general purpose Silicon Controlled Rectifiers
is designed for power supply up to 400Hz on resis-
tive or inductive load.
Symbol Value Unit
I
T(RMS)
10 A
V
DRM
/V
RRM
400, 600 and 800 V
I
GT
15 mA
TYNx10 Series
10A SCR
REV. 2February 2006
STANDARD
Table 2: Order Codes
Part Numbers Marking
TYN410RG TYN410
TYN610RG TYN610
TYN810RG TYN810
A
K
G
A
K
G
A
TO-220AB
Table 3: Absolute Ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current (180° conduction angle)
T
c
= 100°C
10 A
IT
(AV)
Average on-state current (180° conduction angle)
T
c
= 100°C
6.4 A
I
TSM
Non repetitive surge peak on-state
current
t
p
= 8.3 ms
T
j
= 25°C
105
A
t
p
= 10 ms
100
I
²
tI
²
t Value for fusing
t
p
= 10 ms T
j
= 25°C
50
A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 100 mA , dI
G
/dt = 0.1 A/µs
T
j
= 125°C
50 A/µs
I
GM
Peak gate current
t
p
= 20 µs T
j
= 125°C
4A
P
G(AV)
Average gate power dissipation
T
j
= 125°C
1W
P
GM
Maximum gate power
t
p
= 20 µs T
j
= 125°C
10 W
V
DRM
V
RRM
Repetitive peak off-state voltage
TYN410
T
j
= 125°C
400
VTYN610 600
TYN810 800
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
T
L
Maximum lead temperature for soldering during 10s at 2mm from case 260 °C
TYNx10 Series
2/6
Tables 4: Electrical Characteristics (T
j
= 25°C, unless otherwise specified)
Table 5: Thermal Resistance
Symbol Test Conditions Value Unit
I
GT
V
D
= 12 V (D.C.) R
L
= 33
MAX. 15 mA
V
GT
MAX. 1.5 V
V
GD
V
D
= V
DRM
R
L
= 3.3 k T
j
= 110°C
MIN. 0.2 V
t
gt
V
D
= V
DRM
I
G
= 40 mA dI
G
/dt = 0.5 A/µs
TYP. 2 µs
I
H
I
T
= 100 mA Gate open
MAX. 30 mA
I
L
I
G
= 1.2 x I
GT
TYP. 50 mA
dV/dt
Linear slope up to:
V
D
= 67 % V
DRM
Gate open
T
j
= 110°C
MIN. 200 V/µs
V
TM
I
TM
= 20 A tp = 380 µs
MAX. 1.6 V
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25°C
MAX.
10 µA
T
j
= 110°C
2mA
t
q
V
D
= 67 % V
DRM
I
TM
= 20 A V
R
= 25 V
dI
TM
/dt = 30 A/µs dV
D
/dt = 50 V/µs
T
j
= 110°C
TYP. 70 µs
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (D.C.) 2.5 °C/W
R
th(j-a)
Junction to ambient 60 °C/W
Figure 1: Maximum average power dissipation
versus average on-state current
Figure 2: Correlation between maximum
average power dissipation and maximum
allowable temperature (T
amb
and T
lead
)
P(W)
I (A)
T(AV)
360°
α
α = 180°
DC
α = 120°
α = 90°
α = 30°
α = 60°
12
10
8
6
4
2
0
0123456 879
T (°C)
amb
0 20 40 60 80 100 120 140
125
120
100
105
115
110
P(W)
T (°C)
case
12
10
8
6
4
2
0
α = 180°
R = 6°C/W
th
R = 4°C/W
th
R = 2°C/W
th
R = 0°C/W
th
TYNx10 Series
3/6
Figure 3: Average on-state current versus case
temperature
Figure 4: Relative variation of thermal
impedance versus pulse duration
Figure 5: Relative variation of gate trigger
current versus junction temperature
Figure 6: Surge peak on-state current versus
number of cycles
Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t
Figure 8: On-state characteristics (maximum
values)
I (A)
T(AV)
12
10
8
6
4
2
0
0 10 20 30 40 60 70 90 110 12050 80 100 130
T (°C)
case
α
= 180°
D.C.
K=[Z /R
th(j-c) th(j-c)
]
t (s)
p
Z
th(j-c)
Z
th(j-a)
1
0.1
0.01
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
T (°C)
j
I,I,I[T] /
GT H L j
I ,I ,I [T =25°C]
GT H L j
I
GT
I
H
& I
L
2.5
2
1.5
1
0.5
0
-20-30-40 0 10-10 20 4030 50 60 70 80 90 100 110
I (A)
TSM
Number of cycles
T initial=25°C
j
t =10ms
p
One cycle
120
100
80
60
40
20
0
1 10 100 1000
I (A), I t (A s)
TSM
22
t (ms)
p
I t
2
I
TSM
T initial = 25°C
j
10
100
1
2
510
I (A)
TM
1000
100
10
1
012345
V (V)
TM
V =0.82V
R =24m
T max.:
j
t0
d
T
j
=max
T =25°C
j

TYN810RG

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
SCRs 10 Amp 800 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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