PMXB43UNEZ Datasheet PMXB43UNEZ | P7-P9

NXP Semiconductors

PMXB43UNE

20 V, N-channel Trench MOSFET

Product data sheet 19 September 2013 6 / 15

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source

breakdown voltage

I

D

= 250 µA; V

GS

= 0 V; T

j

= 25 °C 20 - - V

V

GSth

gate-source threshold

voltage

I

D

= 250 µA; V

DS

= V

GS

; T

j

= 25 °C 0.4 0.65 0.9 V

I

DSS

drain leakage current V

DS

= 20 V; V

GS

= 0 V; T

j

= 25 °C - - 1 µA

V

GS

= 8 V; V

DS

= 0 V; T

j

= 25 °C - - 10 µA

V

GS

= -8 V; V

DS

= 0 V; T

j

= 25 °C - - -10 µA

V

GS

= 4.5 V; V

DS

= 0 V; T

j

= 25 °C - - 1 µA

I

GSS

gate leakage current

V

GS

= -4.5 V; V

DS

= 0 V; T

j

= 25 °C - - -1 µA

V

GS

= 4.5 V; I

D

= 3.2 A; T

j

= 25 °C - 42 54 mΩ

V

GS

= 4.5 V; I

D

= 3.2 A; T

j

= 150 °C - 64 83 mΩ

V

GS

= 2.5 V; I

D

= 3.1 A; T

j

= 25 °C - 48 68 mΩ

V

GS

= 1.8 V; I

D

= 1 A; T

j

= 25 °C - 56 90 mΩ

R

DSon

drain-source on-state

resistance

V

GS

= 1.5 V; I

D

= 0.1 A; T

j

= 25 °C - 64 120 mΩ

g

fs

forward

transconductance

V

DS

= 10 V; I

D

= 3.2 A; T

j

= 25 °C - 28 - S

R

G

gate resistance f = 1 MHz; T

j=

= 25 °C - 0.84 - Ω

Dynamic characteristics

Q

G(tot)

total gate charge - 5.7 10 nC

Q

GS

gate-source charge - 0.6 - nC

Q

GD

gate-drain charge

V

DS

= 10 V; I

D

= 3.2 A; V

GS

= 4.5 V;

T

j

= 25 °C

- 0.9 - nC

C

iss

input capacitance - 551 - pF

C

oss

output capacitance - 57 - pF

C

rss

reverse transfer

capacitance

V

DS

= 10 V; f = 1 MHz; V

GS

= 0 V;

T

j

= 25 °C

- 46 - pF

t

d(on)

turn-on delay time - 6 - ns

t

r

rise time - 20 - ns

t

d(off)

turn-off delay time - 17 - ns

t

f

fall time

V

DS

= 10 V; I

D

= 3.2 A; V

GS

= 4.5 V;

R

G(ext)

= 6 Ω; T

j

= 25 °C

- 4 - ns

Source-drain diode

V

SD

source-drain voltage I

S

= 0.9 A; V

GS

= 0 V; T

j

= 25 °C - 0.7 1.2 V

NXP Semiconductors

PMXB43UNE

20 V, N-channel Trench MOSFET

Product data sheet 19 September 2013 7 / 15

I

D

(A)

0 431 2

aaa-009130

8

4

12

16

I

D

(A)

0

V

G

S

=

1

.

2

V

1

.

5

V

1

.

8

V

2

.

5

V

4

.

5

V

T

j

= 25 °C

Fig. 7. Output characteristics: drain current as a

function of drain-source voltage; typical values

aaa-009131

10

-4

10

-5

10

-3

I

D

(A)

10

-6

V

GS

(V)

0 10.80.4 0.60.2

min

t

y

p

max

T

j

= 25 °C; V

DS

= 5 V

Fig. 8. Sub-threshold drain current as a function of

gate-source voltage

I

D

(A)

0 16124 8

aaa-009132

50

100

150

R

DSon

(mΩ)

0

V

G

S

=

4

.

5

V

2

.

5

V

2

.

0

V

1

.

8

V

1

.

5

V

1

.

2

V

T

j

= 25 °C

Fig. 9. Drain-source on-state resistance as a function

of drain current; typical values

V

GS

(V)

0 542 31

aaa-009133

50

100

150

R

DSon

(mΩ)

0

T

j

=

2

5

°

C

T

j

=

1

5

0

°

C

I

D

= 3.2 A

Fig. 10. Drain-source on-state resistance as a function

of gate-source voltage; typical values

NXP Semiconductors

PMXB43UNE

20 V, N-channel Trench MOSFET

Product data sheet 19 September 2013 8 / 15

aaa-009134

V

GS

(V)

0 321

8

4

12

16

I

D

(A)

0

T

j

=

1

5

0

°

C

T

j

=

2

5

°

C

V

DS

> I

D

× R

DSon

Fig. 11. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Tj (°C)

-60 1801200 60

aaa-009135

1

0.5

1.5

2

a

0

Fig. 12. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

T

j

(°C)

-60 1801200 60

aaa-009136

0.5

1.0

1.5

V

GS(th)

(V)

0

min

typ

max

I

D

= 0.25 mA; V

DS

= V

GS

Fig. 13. Gate-source threshold voltage as a function of

junction temperature

aaa-009137

V

DS

(V)

10

-1

10

2

101

10

2

10

3

C

(pF)

10

C

i

s

C

o

s

C

rss

f = 1 MHz; V

GS

= 0 V

Fig. 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

PMXB43UNEZ

PMXB43UNEZ

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